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- 저자 : M. Yıldırım (검색결과 4 건)
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Temperature dependent current–voltage characteristics of the Cd/CdO/n–Si/Au–Sb structure
M. Sağlam,A. Ates,M.A. Yıldırım,B. Güzeldir,A. Astam 한국물리학회 2010 Current Applied Physics Vol.10 No.2
In this study, this is the first time, it has been employed Successive Ionic Layer Adsorption and Reaction (SILAR) method in order to prepare Cd/CdO/n–Si/Au–Sb sandwich structure. The sample temperature effect on the current–voltage (I–V) characteristics of Cd/CdO/n–Si/Au–Sb structure has been investigated in a wide temperature range by steps of 20 K. The parameters such as barrier height, ideality factor and series resistance of this structure have been calculated from the forward bias I–V characteristics as a function of sample temperature. With a decreasing temperature, a decreasing in the apparent barrier height (Øb0), an increasing in the ideality factor (n) and a nonlinearity in the activation energy plot have been seen. The experimental values of barrier height and ideality factor for this device have been calculated as 0.871 eV and 1.787 at 300 K and 0.436 eV and 2.221 at 80 K, respectively. These abnormal behaviors can be explain by the barrier inhomogeneities at the metal–semiconductor (M–S) interface. From the temperature dependent I–V characteristics of the Cd/CdO/n–Si/Au–Sb sandwich structure, Øb0 and A*are calculated as 0.790 and 1.160 eV, and 153.90 and 188.42 A/㎠ K2, respectively, by using ln(I0/T2) - q2σ2s/2k2T2 vs. 1/T plot for the two temperature regions. Deviation of experimental values of A* from known value for n–Si has been attributed to the spatial inhomogeneous barrier heights and potential fluctuations at the interface that consist of low and high barrier areas.
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Thermally stimulated current measurements in as-grown TlGaSeS layered single crystals
Tacettin Yıldırım,Nizami M. Gasanly 한국물리학회 2009 Current Applied Physics Vol.9 No.6
Charge carrier traps in as-grown TlGaSeS layered single crystals were studied using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 100 K. The experimental evidences were found for the presence of one shallow hole trapping center in TlGaSeS, located at 12 meV from the valence band. The trap parameters have been calculated using various methods of analysis, and these agree well with each other. Its capture cross-section and concentration have been found to be 8.9 × 10-26 ㎠ and 2.0 × 1014 cm-3, respectively. Analysis of the thermally stimulated current data at different light excitation temperatures leads to a value of 19 meV/decade for the shallow hole traps distribution. Charge carrier traps in as-grown TlGaSeS layered single crystals were studied using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 100 K. The experimental evidences were found for the presence of one shallow hole trapping center in TlGaSeS, located at 12 meV from the valence band. The trap parameters have been calculated using various methods of analysis, and these agree well with each other. Its capture cross-section and concentration have been found to be 8.9 × 10-26 ㎠ and 2.0 × 1014 cm-3, respectively. Analysis of the thermally stimulated current data at different light excitation temperatures leads to a value of 19 meV/decade for the shallow hole traps distribution.
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Controlling the electrical characteristics of Al/p-Si structures through Bi4Ti3O12 interfacial layer
P. Durmus,M. Yıldırım,S. Altındal 한국물리학회 2013 Current Applied Physics Vol.13 No.8
In this study, the effects of high permittivity interfacial Bi4Ti3O12 (BTO) layer deposition on the main electrical parameters; such as barrier height, series resistance, rectifying ratio, interface states and shunt resistance, of Al/p-Si structures are investigated using the currentevoltage (I-V) and admittance measurements (capacitanceevoltage, CeV and conductanceevoltage, G/ω-V) at 1 MHz and room temperature. IeV characteristics revealed that, due to BTO layer deposition, series resistance values that were calculated by both Ohm’s law and Cheung’s method decreased whereas shunt resistance values increased. Therefore, leakage current value decreased significantly by almost 35 times as a result of high permittivity interfacial BTO layer. Moreover, rectifying ratio was improved through BTO interfacial layer deposition. I-V data indicated that high permittivity interfacial BTO layer also led to an increase in barrier height. Same result was also obtained through C-V data. Obtained results showed that the performance of the device is considerably dependent on high permittivity BTO interfacial layer.
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Bingül Dilekci Şahin,Erkan Yıldırım, M.D.,Emrah Ipek,Mahir Cengiz,Kursat Aslan,Esra Poyraz,Selami Demirelli,Murat Bayantemur,Emrah Ermis,Cavlan Ciftci 대한심장학회 2016 Korean Circulation Journal Vol.46 No.4
Background and Objectives: The study aimed to evaluate the correlation between electrocardiographic (ECG) parameters and presence and extent of coronary artery disease (CAD) to indicate the usefulness of these parameters as predictors of severity in patients with stable CAD. Subjects and Methods: Two hundred fifty patients, without a history of any cardiovascular event were included in the study. The ECG parameters were measured manually by a cardiologist before coronary angiography. The patients were allocated into five groups: those with normal coronary arteries (Group 1), non-critical coronary lesions (Group 2), one, two and three vessel disease (Group 3, Group 4 and Group 5, respectively. . Results: Group 1 had the lowest P wave dispersion (PWD) and P wave (Pmax), QT interval (QTmax), QT dispersion (QTd), corrected QT dispersion (QTcd) and QT dispersion ratio (QTdR), while the patients in group 5 had the highest values of these parameters. Gensini score and QTmax, QTd, QTcmax, QTcd, QTdR, Pmax, and PWD were positively correlated. QTdR was the best ECG parameter to differentiate group 1 and 2 from groups with significant stenosis (groups 3, 4, and 5) (area under curve [AUC] 0.846). QTdR was the best ECG parameter to detect coronary arterial narrowing lesser than 50% and greater than 50%, respectively (AUC 0.858). Conclusion: Presence and severity of CAD can be determined by using ECG in patients with stable CAD and normal left ventricular function.
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