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Stress grading in integrated power modules
C. Duchesne,M. Mermet-Guyennet,E. Dutarde,T.Lebey,S. Dagdag 전력전자학회 2007 ICPE(ISPE)논문집 Vol.- No.-
Power electronics packaging, like integrated power modules, constitute an advanced technology leading to power density increase, weight and volume decrease and enhancing the reliability level. However, the continuous increase of the voltage lead to questions regarding power device environment. We discuss in the following different solutions able to achieve the electric stress gradation.
Accurate Mixed Electrical and Electromagnetic Model of a 6,5㎸ IGBT Module
E. Batista,J. M. Dienot,M. Mermet-Guyennet,A. Castellazzi,M. Ciappa,W. Fichtner 전력전자학회 2007 ICPE(ISPE)논문집 Vol.- No.-
The compact model development of a 6,5㎸ field-stop IGBT module is presented. In particular, the model considers the realistic interconnection of IGBTs and anti-parallel diodes found in commercial modules, providing, next to semiconductor physics, an accurate description of electro-magnetic (EM) phenomena associated with the package and layout. A selection of simulation examples demonstrates the usefulness of the proposed solution.
V. Escrouzailles,A. Castellazzi,P.Solomalala,M. Mermet-Guyennet 전력전자학회 2011 ICPE(ISPE)논문집 Vol.2011 No.5
This work proposes a comparative study of the thermo-mechanical stress affecting a power switch when implemented with Si and SiC devices, respectively, and exposed to the same operational conditions. It employs advanced finite-element simulation analysis, adopting a dedicated procedure to implement the coupling between the thermal and mechanical domains, which require distinct numerical constructs for sensible results. The technique is applied to derive information about substrate and assembly design needs when making the transition from Si to SiC. As a case-study, a railway traction power load profile is considered.