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HOT-CARRIER-RELIABILITY STUDY FOR TRANSLATING AC STRESS DEGRADATION TO DC STRESS DEGRADATION
Huh,Yoon Jong,Lyee,Hyeok Jae,Lee,Dong Hoon,Yang,Doo Young,Sung,Yung Kwon 대한전자공학회 1995 ICVC : International Conference on VLSI and CAD Vol.4 No.1
An in-depth study of the AC hot-carrier degradation behaviour of N-channel transistors was carried out based on the alternating stress and charge pumping techniques. Various pulsed stress conditions including frequency, duty ratio of the gate/drain pulse, output loading, and transition time of the gate pulse were used to evaluate the AC effects more common in actual ULSI circuits.