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RISS 인기검색어
- 검색키워드
- 저자 : Lin Shun-Tian (검색결과 3 건)
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Microstructures of W-Mo-Ni-Fe Heavy Alloys
Lin Kuan-Hong,Hsu Chen-Siang,Lin Shun-Tian 한국분말야금학회 2006 한국분말야금학회 학술대회논문집 Vol.2006 No.1
Tungsten heavy alloys with different ratios of Mo and Ni-Fe matrix were liquid-phase-sintered to investigate their microstructural evolution. Results indicated that increased Mo in the alloy promoted the formation of a (W,Mo)(Ni,Fe) type intermetallic compound in the furnace-cooled condition. It was a monoeutectic reaction when the added Mo content was higher than 49at.%, or a eutectic reaction when this value was between 37at,% to 49at.%. When Mo was added between 25at.% to 37at.%, the precipitation of the intermetallic compound took place by either a eutectoid or peritectoid reaction.
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Fabrication of Gas-permeable Die Materials Having Orthogonally Arrayed Pore Channels
Chan Tien-Yin,Lin Shun-Tian,Chang Hua-Jun,Chen Chia-Liang 한국분말야금학회 2006 한국분말야금학회 학술대회논문집 Vol.2006 No.1
Gas-permeable metal die materials are developed using tool steel powder, packed in a mold having the insertion of orthogonally arrayed polymer wires. Linear gas-permeable channels in orthogonal array are thus developed by the burning out of the polymer wires, which yield a microstructure with wear resistance value and air permeability much larger than those of the conventional gas-permeable die material.
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Chang-Lun Liao,Kuan-Hong Lin,Shun-Tian Lin 한양대학교 세라믹연구소 2008 Journal of Ceramic Processing Research Vol.9 No.6
The microstructures and dielectric properties of Ba0.88(Nd1.40Bi0.42La0.30)Ti4O12/ alkali-borosilicate glass composites were investigated in this study, with the volume percentage of the glass phase in the composite being either 50, 55, or 60 vol.%. Sintered density measurements indicated that the density increased with an increase in the sintering temperature for the composites with 50 and 55 vol.% glass additions, but, at a sintering temperature higher than 800 oC, the density decreased for the composite with a 60 vol.% glass addition. XRD patterns revealed that the peak of the highest intensity in the B(NBL)T crystal belongs to the (401) crystal plane, while that in the B(NBL)T/glass composites to the (320) crystal plane. Along with the change in crystalline preferred orientation, the lattice constants of the crystal also changed. SEM micrographs indicated that the B(NBL)T phase developed into columnar grains at sintering temperatures higher than 1260 oC. Moreover, when glass was added, the grain morphology changed, especially at sintering temperatures higher than 850 oC. When sintered at 950 oC for 2 hours, the composite with 55 vol.% glass yielded the highest dielectric constant (εr= 23.2), the lowest dielectric loss (tanδ = 4.1 × 10-3), and a high Q×f value (Q × f = 1,620 GHz, Q = 1/tanδ, f = 6.67 GHz). The microstructures and dielectric properties of Ba0.88(Nd1.40Bi0.42La0.30)Ti4O12/ alkali-borosilicate glass composites were investigated in this study, with the volume percentage of the glass phase in the composite being either 50, 55, or 60 vol.%. Sintered density measurements indicated that the density increased with an increase in the sintering temperature for the composites with 50 and 55 vol.% glass additions, but, at a sintering temperature higher than 800 oC, the density decreased for the composite with a 60 vol.% glass addition. XRD patterns revealed that the peak of the highest intensity in the B(NBL)T crystal belongs to the (401) crystal plane, while that in the B(NBL)T/glass composites to the (320) crystal plane. Along with the change in crystalline preferred orientation, the lattice constants of the crystal also changed. SEM micrographs indicated that the B(NBL)T phase developed into columnar grains at sintering temperatures higher than 1260 oC. Moreover, when glass was added, the grain morphology changed, especially at sintering temperatures higher than 850 oC. When sintered at 950 oC for 2 hours, the composite with 55 vol.% glass yielded the highest dielectric constant (εr= 23.2), the lowest dielectric loss (tanδ = 4.1 × 10-3), and a high Q×f value (Q × f = 1,620 GHz, Q = 1/tanδ, f = 6.67 GHz).
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