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The Effect of Magnetic Field Direction on the Imaging Quality of Scanning Electron Microscope
Libo Ai,Shengxiang Bao,Yongda Hu,Xueke Wang,Chuan Luo 한국자기학회 2017 Journal of Magnetics Vol.22 No.1
The significant reduction of the image quality caused by the magnetic field of samples is a major problem affecting the application of SEM (scanning electron microscopy) in the analysis of electronic devices. The main reason for this is that the electron trajectory is deflected by the Lorentz force. The usual solution to this problem is degaussing the sample at high temperatures. However, due to the poor heat resistance of some electronic components, it is imperative to find a method that can reduce the impact of magnetic field on the image quality and is straightforward and easy to operate without destroying the sample. In this paper, the influence of different magnetic field directions on the imaging quality was discussed by combining the experiment and software simulation. The principle of the method was studied, and the best observation direction was obtained.
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Qiang Li,Shengxiang Bao,Tao Hong,Libo Ai,Yingli Liu,Yulan Jing,Jie Li 한국자기학회 2018 Journal of Magnetics Vol.23 No.1
BiFe1-xVxO₃ (x = 0.00, 0.03, 0.05, 0.07, 0.09) ceramics were prepared by solid-sate reaction method. The effect of V<SUP>5+</SUP> substitution on phase structure, morphology, magnetic and dielectric properties had been investigated. The Rietveld refinement of the X-Ray diffraction data from the BiFe1-xVxO₃ (BFVO) ceramics showed samples with rhombohedral structure (R3c) for x = 0.00-0.07. When x = 0.09, partial phase structural be translated to orthorhombic phase (Pnma). Morphology showed two kinds of crystal and proved the phase to be transition. Magnetic measurements exhibited weak ferromagnetic behavior of sample. BiFe0.93V0.07O₃ ceramic exhibited the highest value of saturation magnetization. Due to V<SUP>5+</SUP> substitution, maybe BFVO attributed weak ferromagnetism to structure distortion and phase transition. Dielectric constant kept a stable value in a wide range frequency of 1 MHz to 1 GHz. With V<SUP>5+</SUP> ions increasing, dielectric constant increased significantly, while dielectric loss kept a low value. These results indicated that BFVO may be promising for application in magneto-electric devices.
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