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TLM 분석법을 통한 ITO - n emitter간, ITO - Ag 간 접촉 저항 특성 분석
유경열(Ryu, Kyungyul),백경현(Beak, Kyunghyun),이준신(YiKim, Junsin) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.11
Indium Tin Oxide (ITO)는 투과도가 높고, 전기 전도도가 뛰어나 TFT, 태양전지 등 여러 가지 산업에서 전극의 재료로 널리 사용되고 있다. 전극의 재료로써 가장 중요하게 고려되어야 할 사항 중의 하나는 전극과 접촉하는 물질과의 접촉 저항이다. 특히, 태양전지에서 높은 접촉 저항은 셀을 직렬저항 요소를 증가시켜 태양전지의 효율 저하를 가져 온다. 본 연구에서는 ITO를 실리콘 태양전지에 적용하기 위하여, ITO - n-type emitter간, ITO - Ag 간의 접촉 특성을 Transfer Length Method(TLM)을 통하여 분석하였다. p-type 실리콘의 전면을 도핑하여 pn접합을 형성한 후, 그 위에 ITO 패턴을 형성하여 ITO-emitter 간의 접촉 특성을 측정하였고, 두껍게 증착한 SiNx 박막 전면에 ITO를 증착한 후, Ag 패턴을 형성하여 ITO-Ag간의 접촉 특성을 측정 하였다. 측정 결과, ITO와 emitter 간의 접촉 비저항은 0.9{Omega}-cm² 을 나타내었고, ITO와 Ag와의 접촉 비저항은 0.096{Omega}-cm² 을 나타내었다.
산소 분압에 따른 ITO 박막의 특성 변화에 대한 연구
유경열(Ryu, Kyungyul),백경현(Beak, Kyunghyun),박형식(Park, Hyeongsik),이준신(YiKim, Junsin) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.11
ITO(Indium Tin Oxide)는 전도도와 투과도 특성이 뛰어나 디스플레이, 태양전지, LED 등 여러 산업에서 전극 물질로 널리 사용 되어져 왔다. 최근 ITO의 사용이 급격히 증가하면서 이에 대한 연구가 활발히 진행되고 있다. ITO는 막의 특성을 좋게 하기 위하여 증착 시 Ar gas와 함께 O₂가스를 첨가하기도 한다. 본 연구에서는 산소 분압에 따른 ITO 박막의 전기적, 광학적 특성에 대하여 연구하였다. Corning사의 eagle 2000 glass 기판위에 스퍼터링을 이용하여 ITO layer를 증측하였고, 증착시, O₂ partial pressure를 0 - 0.5%까지 0.1% 간격으로 가변하였다. 증착된 샘플은 Sinton사의 UV-vis 장비를 이용하여 광학적 특성을 측정하였고, Hall measurement 장비를 이용하여 전기적 특성을 측정하였다. ITO 박막은 O₂의 partial pressure가 증가할수록 향상된 전기적, 광학적 특성을 나타내었다.
Park, Cheolmin,Ryu, Kyungyul,Balaji, Nagarajan,Lee, Seunghwan,Kim, Jungmo,Ju, Minkyu,Lee, Youn-Jung,Lee, Hoongjoo,Yi, Junsin American Scientific Publishers 2015 Journal of nanoscience and nanotechnology Vol.15 No.6
<P>Recently, the importance of solar cell research has emerged due to emerging social issues such as environmental pollution problems and rising oil prices. Accordingly, each company is studying to make solar cell of high efficiency. In order to fabricate high-efficiency solar cells, the two major techniques have to be applied on the rear. One is complete passivation of the surface using a thermal oxide and the other one is the part that comes in contact with the electrode doped partially LBSF (Local BSF) formation. In this paper, LBC technology which is usually applied for high efficiency crystalline silicon solar cell, applied to mass productive solar cell to achieve high open circuit voltage and short circuit current with low surface recombination from rear side. Thermal SiO2/SiN(x) double layer which has superior thermal stability is formed on rear surface as passivation layer, then 1% of the whole rear surface area is locally contacted with aluminum. Finally, the cell has been fired at high temperature and the cell process has complete. The fabricated LBC cells conversion efficiency was 18.0% with 625 mV of open-circuit voltage (V(oc)), 37.58 mA/cm2 of current density (J(sc)), 76.3% of fillfactor (FF) at 5% contact coverage, respectively.</P>
Lee, Jonghwan,Park, Cheolmin,Dao, Vinh Ai,Lee, Youn-Jung,Ryu, Kyungyul,Choi, Gyuho,Kim, Bonggi,Ju, Minkyu,Jeong, Chaehwan,Yi, Junsin American Scientific Publishers 2013 Journal of Nanoscience and Nanotechnology Vol.13 No.11
<P>In this paper, we present a detailed study on the local back contact (LBC) formation of rear-surface-passivated silicon solar cells, where both the LBC opening and metallization are realized by one-step alloying of a dot of fine pattern screen-printed aluminum paste with the silicon substrate. Based on energy dispersive spectrometer (EDS) and scanning electron microscopy (SEM) characterizations, we suggest that the aluminum distribution and the silicon concentration determine the local-back-surface-field (Al-p+) layer thickness, resistivity of the Al-p+ and hence the quality of the Al-p+ formation. The highest penetration of silicon concentration of 78.17% in aluminum resulted in the formation of a 5 microm-deep Al-p+ layer, and the minimum LBC resistivity of 0.92 x 10-6 omega cm2. The degradation of the rear-surface passivation due to high temperature of the LBC formation process can be fully recovered by forming gas annealing (FGA) at temperature and hydrogen content of 450 degrees C and 15%, respectively. The application of the optimized LBC of rear-surface-passivated by a dot of fine pattern screen(-) printed aluminum paste resulted in efficiency of up to 19.98% for the p-type czochralski (CZ) silicon wafers with 10.24 cm2 cell size at 649 mV open circuit voltage. By FGA for rear-surface passivation recovery, efficiencies up to 20.35% with a V(OC) of 662 mV, FF of 82%, and J(SC) of 37.5 mA/cm2 were demonstrated.</P>
Association between interstitial cells of Cajal and anti-vinculin antibody in human stomach
Ji Hyun Kim,Seung-Joo Nam,Sung Chul Park,Sang Hoon Lee,Tae Suk Kim,Minjong Lee,Jin Myung Park,Dae Hee Choi,Chang Don Kang,Sung Joon Lee,Young Joon Ryu,Kyungyul Lee,So Young Park 대한생리학회-대한약리학회 2020 The Korean Journal of Physiology & Pharmacology Vol.24 No.2
Interstitial cells of Cajal (ICC) are known as the pacemaker cells of gastrointestinal tract, and it has been reported that acute gastroenteritis induces intestinal dysmotility through antibody to vinculin, a cytoskeletal protein in gut, resulting in small intestinal bacterial overgrowth, so that anti-vinculin antibody can be used as a biomarker for irritable bowel syndrome. This study aimed to determine correlation between serum anti-vinculin antibody and ICC density in human stomach. Gastric specimens from 45 patients with gastric cancer who received gastric surgery at Kangwon National University Hospital from 2013 to 2017 were used. ICC in inner circular muscle, and myenteric plexus were counted. Corresponding patient’s blood samples were used to determine the amount of anti-vinculin antibody by enzyme-linked immunosorbent assay. Analysis was done to determine correlation between anti-vinculin antibody and ICC numbers. Patients with elevated anti-vinculin antibody titer (above median value) had significantly lower number of ICC in inner circular muscle (71.0 vs. 240.5, p = 0.047), and myenteric plexus (12.0 vs. 68.5, p < 0.01) compared to patients with lower anti-vinculin antibody titer. Level of serum anti-vinculin antibody correlated significantly with density of ICC in myenteric plexus (r = –0.379, p = 0.01; Spearman correlation). Increased level of circulating anti-vinculin antibody was significantly correlated with decreased density of ICC in myenteric plexus of human stomach.