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Converting Interfaces on Application-specific Network-on-chip
Kyuseung Han,Jae-Jin Lee,Woojoo Lee 대한전자공학회 2017 Journal of semiconductor technology and science Vol.17 No.4
As mobile systems are performing various functionality in the IoT (Internet of Things) era, network-on-chip (NoC) plays a pivotal role to support communication between the tens and in the future potentially hundreds of interacting modules in system-on-chips (SoCs). Owing to intensive research efforts more than a decade, NoCs are now widely adopted in various SoC designs. Especially, studies on application-specific NoCs (ASNoCs) that consider the heterogeneous nature of modern SoCs contribute a significant share to use of NoCs in actual SoCs, i.e., ASNoC connects non-uniform processing units, memory, and other intellectual properties (IPs) using flexible router positions and communication paths. Although it is not difficult to find the prior works on ASNoC synthesis and optimization, little research has addressed the issues how to convert different protocols and data widths to make a NoC compatible with various IPs. Thus, in this paper, we address important issues on ASNoC implementation to support and convert multiple interfaces. Based on the in-depth discussions, we finally introduce our FPGAproven full-custom ASNoC.
Converting Interfaces on Application-specific Network-on-chip
Han, Kyuseung,Lee, Jae-Jin,Lee, Woojoo The Institute of Electronics and Information Engin 2017 Journal of semiconductor technology and science Vol.17 No.4
As mobile systems are performing various functionality in the IoT (Internet of Things) era, network-on-chip (NoC) plays a pivotal role to support communication between the tens and in the future potentially hundreds of interacting modules in system-on-chips (SoCs). Owing to intensive research efforts more than a decade, NoCs are now widely adopted in various SoC designs. Especially, studies on application-specific NoCs (ASNoCs) that consider the heterogeneous nature of modern SoCs contribute a significant share to use of NoCs in actual SoCs, i.e., ASNoC connects non-uniform processing units, memory, and other intellectual properties (IPs) using flexible router positions and communication paths. Although it is not difficult to find the prior works on ASNoC synthesis and optimization, little research has addressed the issues how to convert different protocols and data widths to make a NoC compatible with various IPs. Thus, in this paper, we address important issues on ASNoC implementation to support and convert multiple interfaces. Based on the in-depth discussions, we finally introduce our FPGA-proven full-custom ASNoC.
TEI-power : Temperature Effect Inversion--Aware Dynamic Thermal Management
Lee, Woojoo,Han, Kyuseung,Wang, Yanzhi,Cui, Tiansong,Nazarian, Shahin,Pedram, Massoud Association for Computing Machinery 2017 Transactions on Design Automation of Electronic Sy Vol.22 No.3
<P>FinFETs have emerged as a promising replacement for planar CMOS devices in sub-20nm technology nodes. However, based on the temperature effect inversion (TEI) phenomenon observed in FinFET devices, the delay characteristics of FinFET circuits in sub-, near-, and superthreshold voltage regimes may be fundamentally different from those of CMOS circuits with nominal voltage operation. For example, FinFET circuits may run faster in higher temperatures. Therefore, the existing CMOS-based and TEI-unaware dynamic power and thermal management techniques would not be applicable. In this article, we present TEI-power, a dynamic voltage and frequency scaling-based dynamic thermal management technique that considers the TEI phenomenon and also the superlinear dependencies of power consumption components on the temperature and outlines a real-time trade-off between delay and power consumption as a function of the chip temperature to provide significant energy savings, with no performance penalty-namely, up to 42% energy savings for small circuits where the logic cell delay is dominant and up to 36% energy savings for larger circuits where the interconnect delay is considerable.</P>
崔種佑,李重吉,李奎承 忠南大學校 環境問題硏究所 1987 環境硏究 Vol.5 No.2
1986년 3월 20일∼4월 6일에 忠南의 大德, 公州, 錦山, 論山, 및 燕岐郡 등 5個 地域에서 總 108點의 畓土壤 試料를 採取하여 8種의 有機燐系 農藥을 대상으로 殘留水準을 조사하여 얻은 중요한 결과를 要約하면 아래와 같다. 1. 모두 7種의 農藥成分을 檢出하였으며 檢出頻度는 Dursban(38.8%), IBP(16.7%) 및 Diazinon(11.1%)의 순이었고, 平均殘留은 Dursban이 0.01ppm, IBP가 0.002ppm이었으며, 기타의 약제는 모두 흔적수준이었다. 2. 檢出試料의 殘留範圍와 平均殘留量은 Diazinon이 흔적∼0.003ppm과 흔적수준, IBP가 흔적∼0.196ppm과 0.01ppm, 그리고 Duraban은 흔적∼0.15ppm과 0.025ppm이었다. 3. 지역별도의 錦山郡과 燕岐郡에서 타지역보다 Dursban의 檢出頻度가 높은 것으로 나타났다. Residue levels of 8 organophosphorous pesticides were evaluated on 108 paddy field soils collected from 5 districts of Chungnam area during March, 20-April, 6, 1986. 7 chemicals were detected and showed the highest detection frequency on Dursban (39.8%) and the lowest on Phentoate (1.9%), also average residue levels were 0.01ppm on Dursban, 0.02ppm on IBP, and trace on the other detected pesticides.
최종우,이규승 忠南大學校 環境問題硏究所 1994 環境硏究 Vol.12 No.-
In order to prduce the compost with garbage waste of Agricutural college of Chungnam University, high rate composter was manufactured with drum type and two kinds of composts produced using that composter. It were compared with chemical fertilizer for the growth of perilla(Perilla frutescens) and young radish(Rapha-nus sativus radicula). 1. Composts of two types were produced in high rate composter within 7 days under operating condition of 1 hour per every 4 hours. 2. Composing was not affected by addition of the briquet ash for water control. 3. Germination rate of perilla was reduced at A-3(60%) and B-3(40%) contrast with control(85%) at 5 days after treatment in media. 4. Germination rate of young radish was elevated by treatment of two composts at A-1 and A-3, but slightly inhibited at B-1 and B-3. 5. Although two prepared composts showed positive effects to growth of young radish within 10 days after treatment, while the growth was inhibited by compost B including high salt contents after 20 days. 6. High salt and low nitrogen contents were found in young radish, this seemed to be saline effect orginated from garbage wastes.
Functionalized inclined-GaN based nanoneedles
Kim, Kwon-Ho,Lee, Kyuseung,Hong, Hyeonaug,Yang, Dasom,Ryu, WonHyoung,Nam, Okhyun,Kim, Yeu-Chun THE KOREAN SOCIETY OF INDUSTRIAL AND ENGINEERING 2018 JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY -S Vol.59 No.-
<P><B>Abstract</B></P> <P>Techniques for the delivery foreign materials into living cells as well as for sensing have undeniable worth in cell biology research. A major barrier for intracellular delivery is to cross the cell membrane with little or no damage. Among the various intracellular delivery methods, one-dimensional nanoneedles are one of the promising methods for insertion with minimal invasiveness to a cell. Most of the previous studies have been conducted using vertical nanoneedle. Here, we synthesized new inclined nanoneedles and demonstrated a novel platform using inclined-gallium nitride nanoneedles (iGaN NNs) to facilitate efficient intracellular delivery. In our system, foreign molecules were successfully delivered into cytoplasm of a cell through the penetration of the cell membrane by the iGaN NNs.</P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Growth of semipolar InGaN quantum well structure using self-organized nano-masks on m-sapphire.
Ryu, Yongwoo,Jeong, Joocheol,Jang, Jongjin,Lee, Kyuseung,Min, Daehong,Kim, Jinwan,Kim, Minho,Moon, Seunghwan,Yoo, Geunho,Nam, Okhyun American Scientific Publishers 2013 Journal of Nanoscience and Nanotechnology Vol.13 No.9
<P>This paper reports the improved microstructural and optical properties of semipolar (11-22) InGaN quantum well (QW) structures grown on SiO2 nanorods formed by introducing self-organized masks. The crystal quality of GaN grown on SiO2 nanorods was significantly improved by the defect blocking mechanism. The cathodoluminescence (CL) intensity of regrown GaN on SiO2 nanorods increased approximately 9.5 times in comparison with that of the reference GaN, which is attributed to the defect reduction effect of the nanorods. Semipolar InGaN/GaN double QWs grown on SiO2 nanorod masks showed an approximately 80% increase in internal quantum efficiency (IQE) in relation to that of the reference GaN.</P>