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Ka-Band 5-Bit MMIC Phase Shifter Using InGaAs PIN Switching Diodes
Jung Gil Yang,Kyounghoon Yang IEEE 2011 IEEE microwave and wireless components letters Vol.21 No.3
<P>The design and performance of a Ka-band 5 b MMIC phase shifter using InGaAs PIN switching diodes is presented. In order to achieve low insertion loss and good phase shifting characteristics at Ka-band, a switched reactance type InGaAs PIN-diode phase shifter topology has been employed with a compact bias network. The fabricated InGaAs PIN MMIC phase shifter has demonstrated good performance characteristics such as a low insertion loss of less than 7.8 dB and a high P<SUB>1</SUB> dB of 21.0 dBm compared to the previous results.</P>
Broadband InGaAs PIN Traveling-Wave Switch Using a BCB-Based Thin-Film Microstrip Line Structure
Jung Gil Yang,Kyounghoon Yang IEEE 2009 IEEE microwave and wireless components letters Vol.19 No.10
<P>This letter describes the design and fabrication of a broadband InGaAs PIN traveling wave switch. A new thin-film microstrip line structure integrated with InGaAs PIN diodes has been used to enhance the switch performance at higher frequencies. The developed InGaAs PIN switch has an insertion loss of less than 3.2 dB and an isolation of greater than 40 dB in a broadband frequency range from 25 to 95 GHz. The BCB-based multi-layer technology effectively reduces the chip size of the fabricated SPDT MMIC switch to 1.05 times 0.58 mm<SUP>2</SUP>. To our knowledge, this is the first InGaAs PIN traveling-wave switch demonstrated up to 95 GHz.</P>
Yang, Changyol,Moon, Kyounghoon,Song, Jae-Won,Kim, Jiwon,Lee, Jung-Ho,Lim, Jae-Hong,Yoo, Bongyoung The Electrochemical Society 2018 Journal of the Electrochemical Society Vol.165 No.5
<P>A novel method using an all-wet process to reduce the cost of material in Si-based devices is described, called the electroless and electrodeposit-assisted stripping (E(2)AS) process. In this approach, a highly adhesive electroless Ni nanorod seed layer is formed on the Si substrate in place of a conventional high-cost physical vapor deposition (PVD) process. Then, a highly stressed Ni film is electrodeposited as the stress layer for lift-off of the Si thin film. Using the E2AS method, a thin Si film can be repetitively detached from a Si substrate without kerf loss, reducing the solar cell manufacturing cost. (C) 2018 The Electrochemical Society.</P>
전양수(Yang-Soo JEON),오윤영(Yun-Young OH),편용범(Yongbeom PYEON),이경훈(Kyounghoon LEE) 전남대학교 어업기술연구소 2019 어업기술연구소보고지 Vol.12 No.1
The recent mass mortality of abalone in aquaculture was caused by a rapid growth of harmful bacteria such as vibrio due to abnormal high temperature phenomenon. In order to prevent these mass mortality of abalone, it is needed to provide adequate electric stimulus to sterilize them. This study analyzes the behavior patterns of abalone according to electric stimulus by observing the ambient flow rates and turbulence intensities. It also investigates the electric responses of abalone according to external stimulus sources using PIV, a noncontact velocity measurement method. The average flow velocity of abalone was measured to be about 0.0015 m/s and the average turbulence intensity was measured to be about 44.7%. When a [1.5V,0.12A] stimulus was provided, the mean flow velocity and the average turbulence intensity were estimated to be about 0.0023 m/s and 46.4%, respectively. When a [3.5V,0.27A] stimulus was provided, the mean flow velocity was about 0.0096 m/s and the average turbulence intensity was about 60.7%.
음향산란이론모델을 이용한 살오징어(Todarodes pacifica)의 음향후방산란강도 측정
양희승(HeeSeung YANG),김민수(MinSoo KIM),오우석(WooSeok OH),이경훈(KyoungHoon LEE) 전남대학교 어업기술연구소 2021 어업기술연구소보고지 Vol.14 No.1
Recently, Japenese common squid, an important fisheries resource, has been decreased in the coastal waters of Korea. The purpose of this study is to estimate the TS of Japanese common squid and to use it as basic data to figure out the exact amount of resources of Japanese common squid. In order to estimate the TS, the total length and mantle length of 26 common squids were measured and photographed. The samples photographed were digitized and applied to the DWBA theoretical model. In the shortest mantle length No. 10 sample, the range of acoustic backscattering target strength for each frequency was measured –101.4 dB∼–55.9 dB at 38 kHz, –91.9 dB∼–57.1 dB at 70 kHz, –99.8 dB∼–56.2 dB at 120 kHz. The acoustic scattering strength range of No. 21 sample with the longest mantle length was measured –98.44 dB∼–55.3 dB at 38 kHz, –84.9 dB∼–53.8 dB at 70 kHz, and –89.5 dB ∼–51.5 dB at 120 kHz. The TS regression equations for common squid at each frequency was as follows; 38kHzMax = 20log10(ML) - 71.5, 38 kHzAvg = 20log10(ML) – 81.5, 70kHzMax = 210log10(ML) – 76.9, 70kHzAvg. 20log10(ML) - 82.8, 120kHzMax = 20log10(ML) – 75.6, 120kHzAvg = 20log10(ML) – 83.0
High dynamic-range CMOS image sensor cell based on self-adaptive photosensing operation
Lee, Sungsik,Yang, Kyounghoon Institute of Electrical and Electronics Engineers 2006 IEEE transactions on electron devices Vol.53 No.7
This brief presents the performance characteristics of a new CMOS active pixel structure based on a self-adaptive light-sensing operation, which is implemented using a standard 0.35-μm CMOS logic process. In order to improve the dynamic range (DR) as well as the sensitivity at low illumination intensity, a new photogate structure is proposed and incorporated into the pixel structure. At an optimum bias condition of the photogate, the DR was increased by more than three times and the sensitivity at low illumination intensity was improved by two times compared to the conventional structure. The new pixel structure is found to allow simultaneous improvements in both the DR and the sensitivity without any process modification.