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Process Improvements for Low-Defect CMOS Gate Oxide
Jiang, Chun,Mitchell, Todd,Kroonblawd, Loren,Nguyen, Duc,Lew, Eugene,Hu, Chenming, 대한전자공학회 1993 ICVC : International Conference on VLSI and CAD Vol.3 No.1
N^- well drive-in in oxygen ambient is found to induce stacking faults, which have a deleterious effect on the N^- well MOS gate oxide breakdown characteristics. This effect can be eliminated by using N^- well drive-in with nitrogen anneal. A wet gate oxide process is fund to give better gate oxide integrity than dry gate oxide and a comparable hot carrier robustness. The us of N^- well drive-in with nitrogen anneal and wet oxide processes, has drastically reduced oxide defect densities in both P^- substrate and N^- well MOS devices.