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Flexible thermoelectric module based on zinc oxide thin film grown via SILAR
Klochko N.P.,Klepikova K.S.,Khrypunova I.V.,Zhadan D.O.,Petrushenko S.I.,Kopach V.R.,Dukarov S.V.,Sukhov V.M.,Kirichenko M.V.,Khrypunova A.L. 한국물리학회 2021 Current Applied Physics Vol.21 No.-
In this work, we used the low temperature solution growth Successive Ionic Layer Adsorption and Reaction (SILAR) for a deposition of the nanostructured undoped and indium doped (ZnO and ZnO:In) thin films on flexible polyimide (PI) substrates for their use as cheap non-toxic thermoelectric materials in the flexible thermoelectric modules of planar type to power up portable and wearable electronics and miniature devices. The use of a zincate solution in the SILAR method allows to obtain ZnO:In film, which after post-growth annealing at 300 ◦C has low resistivity ρ ≈ 0.02 Ω m, and high Seebeck coefficient 147 μV/K and thermoelectric power factor ~1 μW K 2 m 1 at near-room temperatures. As evidence of the operability of the manufactured films as the basis of the TE device, we have designed and tested experimental lightweight thin-film thermoelectric module. This TE module is able to produce specific output power 0.8 μW/m2 at ΔT = 50 K.