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Transfer‐Printing of As‐Fabricated Carbon Nanotube Devices onto Various Substrates
Thanh, Quy Nguyen,Jeong, Huiseong,Kim, Jinwoong,Kevek, J. W.,Ahn, Y. H.,Lee, Soonil,Minot, Ethan D.,Park, Ji‐,Yong WILEY‐VCH Verlag 2012 ADVANCED MATERIALS Vol.24 No.33
<P><B>Exact replicas of carbon nanotube devices</B> as fabricated on SiO<SUB>2</SUB>/Si substrates are prepared on various non‐conventional substrates such as nonplanar or soft substrates (see images) by a simple, yet versatile, transfer‐printing “cut‐and‐paste” method. In this way, harsh growth and fabrication processes can be minimized on the target substrates. The electrical characteristics of transfer‐printed devices are compared to those of original devices.</P>
Hyperspectral Imaging of Structure and Composition in Atomically Thin Heterostructures
Havener, Robin W.,Kim, Cheol-Joo,Brown, Lola,Kevek, Joshua W.,Sleppy, Joel D.,McEuen, Paul L.,Park, Jiwoong American Chemical Society 2013 Nano letters Vol.13 No.8
<P>Precise vertical stacking and lateral stitching of two-dimensional (2D) materials, such as graphene and hexagonal boron nitride (h-BN), can be used to create ultrathin heterostructures with complex functionalities, but this diversity of behaviors also makes these new materials difficult to characterize. We report a DUV–vis-NIR hyperspectral microscope that provides imaging and spectroscopy at energies of up to 6.2 eV, allowing comprehensive, all-optical mapping of chemical composition in graphene/h-BN lateral heterojunctions and interlayer rotations in twisted bilayer graphene (tBLG). With the addition of transmission electron microscopy, we obtain quantitative structure–property relationships, confirming the formation of interfaces in graphene/h-BN lateral heterojunctions that are abrupt on a micrometer scale, and a one-to-one relationship between twist angle and interlayer optical resonances in tBLG. Furthermore, we perform similar hyperspectral imaging of samples that are supported on a nontransparent silicon/SiO<SUB>2</SUB> substrate, enabling facile fabrication of atomically thin heterostructure devices with known composition and structure.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2013/nalefd.2013.13.issue-8/nl402062j/production/images/medium/nl-2013-02062j_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl402062j'>ACS Electronic Supporting Info</A></P>