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Low Power Digital Logic Gate Circuits Based on N-Channel Oxide TFTs
임도(Tao Ren),박기찬(KeeChan Park),오환술(HwanSool Oh) 大韓電子工學會 2011 電子工學會論文誌-SD (Semiconductor and devices) Vol.48 No.3
N-channel 산화물 박막 트랜지스터(Thin Film Transistor, 이하 TFT)만을 이용한 저소비전력 inverter, NAND, NOR의 논리 게이트 회로를 제안한다. 제안된 회로는 asymmetric feed-through와 bootstrapping을 이용해서 pull-up, pull-down 스위치가 동시에 켜지지 않도록 설계하였다. 그 결과로 출력신호 전압 범위가 입력신호 전압과 동일하고 정전류가 흐르지 않는다. 인버터는 5개의 TFT와 2개의 capacitor로, NAND 및 NOR 게이트는 각각 10개의 TFT와 4개의 capacitor로 구성된다. 산화물 TFT 모델을 사용하여 SPICE 시뮬레이션을 수행하여 제안된 회로의 동작을 성공적으로 검증하였다. Low-power logic gates, i.e. inverter, NAND, and NOR, are proposed employing only n-channel oxide thin film transistors (TFTs). The proposed circuits were designed to prevent the pull-up and pull-down switches from being turned on simultaneously by using asymmetric feed-through and bootstrapping, thereby exhibited same output voltage swing as the input signal and no static current. The inverter is composed of 5 TFTs and 2 capacitors. The NAND and the NOR gates consist of 10 TFTs and 4 capacitors respectively. The operations of the logic gates were confirmed successfully by SPICE simulation using oxide TFT model.
김지선(JiSun Kim),박기찬(KeeChan Park),오환술(HwanSool Oh) 대한전자공학회 2012 電子工學會論文誌-SD (Semiconductor and devices) Vol.49 No.1
We have developed a new gate driver circuit for liquid crystal displays using oxide thin-film transistors (TFTs). In the new gate driver, negative gate bias is applied to turn off the oxide TFTs because the oxide TFT occasionally has negative threshold voltage (VT). In addition, we employed three parallel pull-down TFTs that are turned on in turns to enhance the stability. SPICE simulation showed that the proposed circuit worked successfully covering the VT range of -3 V ~ +6 V And fabrication results confirmed stable operation of the new circuit using oxide TFTs. 산화물 박막트랜지스터를 이용하여 액정 디스플레이 패널에 내장할 수 있는 새로운 게이트 드라이버 회로를 설계하고 제작하였다. 산화물 박막트랜지스터는 문턱전압이 음의 값을 갖는 경우가 많기 때문에 본 회로에서는 음의 게이트 전압을 인가하여 트랜지스터를 끄는 방법을 적용하였다. 또한 세 개의 풀다운 트랜지스터를 병렬로 배치하고 번갈아 사용하므로 안정적인 동작이 가능하다. 제안한 회로는 트랜지스터의 문턱전압이 -3 V 에서 +6 V인 범위에서 정상적으로 동작하는 것을 시뮬레이션을 통해서 확인하였으며, 실제로 유리 기판 상에 제작하여 안정적으로 동작하는 것을 검증하였다.
Ultrathin flexible thin film transistors with CYTOP encapsulation by debonding process
Kim, Jae Moon,Oh, Jongsu,Jung, Kyung-Mo,Park, KeeChan,Jeon, Jae-Hong,Kim, Yong-Sang Institute of Physics 2019 Semiconductor science and technology Vol.34 No.7
<P>We fabricated ultrathin flexible thin film transistors with hydrophobic encapsulation layer by debonding process. In the debonding process, to separate the transistors from the carrier glass in deionized (DI) water, a strong hydrophobic material such as CYTOP was used for encapsulation, thus increasing their resistance to moisture. PVA was used as a release layer and the debonding process was optimized to separate the carrier glass and the transistors. It was confirmed that water penetration into the device can be suppressed effectively when the CYTOP thickness is 800 nm. In addition, the electrical characteristics remained almost constant even in the presence of water for 50 min. The total thickness after debonding process was approximately 2 <I>μ</I>m. Waterproof experiments and debonding process were performed for a simple inverter circuit as well as a discrete device, and the operation and voltage gain of the inverter did not change when water was placed on the device or after debonding process. Finally, the flexibility was measured by transferring the device to a flexible PI substrate. Consequently, it was confirmed that degradation in the electrical properties was slightly up to a bending radius of 2.5 mm.</P>
Yang JooWon,Kim Yong-Sang,Jeon Jae-Hong,Park KeeChan 한국정보디스플레이학회 2021 Journal of information display Vol.22 No.3
We report the effects of grain boundary (GB) protrusion on the off-state current (IOFF) of p-channel polycrystalline silicon thin-film transistors by using three-dimensional technology computer-aided design (TCAD) simulation. We found that the IOFF at a high drain bias, VDS = −10 V, varies more than 10 times as the position of the GB protrusion changes, whereas it varies less than two times if the GB has no protrusion, i.e. has a flat surface. The TCAD analysis showed that the IOFF was mainly caused by band-to-band tunneling and that it increased noticeably when the GB protrusion was located at a certain distance from the highly doped drain region because the GB protrusion intensified the electric field at the drain junction.Wealso found that the IOFF increases further when the GB line is not perpendicular to the channel direction but has some tilt angle because the GB protrusion necessarily encompassed a critical region that maximized the electric field when it was positioned within the GB protrusion.
P181 Secondary cutaneous DLBCL has a higher IPI score and worse prognosis than DLBCL, leg type
( Hojeong Shin ),( Woojin Lee ),( Kwanghee Won ),( Chonghyun Won ),( Sungeun Chang ),( Jeeho Choi ),( Keechan Moon ),( Chansik Park ),( Jooryung Huh ),( Cheolwon Suh ),( Miwoo Lee ) 대한피부과학회 2016 대한피부과학회 학술발표대회집 Vol.68 No.2
<div style="display:none">fiogf49gjkf0d</div><div style="display:none">fiogf49gjkf0d</div><div style="display:none">fiogf49gjkf0d</div><div style="display:none">fiogf49gjkf0d</div><div style="display:none">fiogf49gjkf0d</div><div style="display:none">fiogf49gjkf0d</div><div style="display:none">fiogf49gjkf0d</div> Background: Differences in skin lesions and survival data for cutaneous diffuse large B-cell lymphoma (DLBCL) depending on primary tumor site are currently unknown. Objectives: we aimed to analyze the clinical features of skin lesions and survival outcomes of cutaneous DLBCL according to the primary tumor site. Methods: Forty-seven patients with cutaneous DLBCL were classified as primary cutaneous DLBCL or cutaneous DLBCL secondary to primary disease. Clinical features, survival outcomes, and prognostic factors were analyzed using patient medical records. Survival outcomes were analyzed using the Kaplan.Meier method and compared using the log-rank test. Results: Although skin lesion characteristics did not significantly differ between groups, secondary cutaneous DLBCL more commonly presented disseminated skin lesions that involved multiple anatomical sites. Primary cutaneous DLBCL demonstrated a less aggressive clinical course and better survival outcomes than secondary cutaneous DLBCL. Disseminated skin lesions and a location on the leg significantly affected the prognosis of primary cutaneous DLBCL. The multiplicity of skin lesions and time point of cutaneous involvement were associated with prognosis in secondary cutaneous DLBCL. Conclusion: Although the clinical features of skin lesions were similar regardless of subgroup, survival outcomes and prognostic factors differed depending on the primary tumor site of cutaneous DLBCL.