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Dielectric Properties of Strained Nickel Oxide Thin Films
Kashir Alireza,정현우,이길호,Pavlo Mikheenko,정윤희 한국물리학회 2019 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.74 No.10
The dielectric properties of NiO thin films grown by pulsed laser deposition have been studied as a function of strain at temperature from 10 to 300 K. Above 150 K, the contribution of space-charge polarization to the dielectric permittivity of NiO films becomes dominant, and the more defective films, which were grown at low temperatures shows a drastical increase in the dielectric constant up to room temperature. While the atomically-ordered film, which was grown at high temperature doesn't show any considerable change in the dielectric constant in the range from 10 to 300 K. Below 100 K, the effect of strain on the dielectric constant becomes clear. An increase in dielectric permittivity is observed in the strained films while the relaxed film doesn't show any remarkable deviation from its bulk value. The low-temperature dielectric behavior of NiO thin films can be interpreted based on the effect of strain on the lattice dynamics of rocksalt binary oxides.
A thin film perspective on quantum functional oxides
Abhijit Biswas,Muhammad Talha,Kashir Alireza,정윤희 한국물리학회 2019 Current Applied Physics Vol.19 No.3
Transition metal oxides show remarkably diverse quantum functional properties such as high temperature superconductivity, colossal magnetoresistance, multiferroicity, two-dimensional electron gas, and topological insulators. This diversity manifests as a result of many energy scales of similar magnitude competing rather than any particular one dominating in the system. In this regard, growth of atomically controlled epitaxial thin films and heterostructures would allow to control relevant energy scales by imposing various stimuli, such as reduction of dimensionality, introduction of interfaces, modification of the interfacial octahedral tilts, and symmetry breaking; in turn, modified functional properties or completely new phenomena may emerge in epitaxial thin films and heterostructures. Also of exceeding importance is the fact that atomically controlled epitaxial thin films and heterostructures of the multifunctional oxides offer promising potentials for next generation oxide electronics. In this short review, we collect representative examples of quantum correlated phenomena arising in epitaxial films and heterostructures of transition metal oxides and highlight some of the progresses achieved in thin film research of various functional oxides in the last couple of decades.