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K.F. Abd-El-Rahman,A.A.A. Darwish 한국물리학회 2011 Current Applied Physics Vol.11 No.6
Antimony trisulphide (Sb_2S_3) films were prepared by thermal evaporation technique on n-type single crystal Si substrates to fabricate p-Sb_2S_3/n-Si heterojunctions. The electrical transport properties of the peSb_2S_3/n-Si heterojunctions were investigated by currentevoltage (I―V) and capacitance―voltage (C―V) measurements. The temperature-dependent I―V characteristics revealed that the forward conduction was determined by multi-step tunnelling current and the activation energy of saturation current was about 0.54 eV. The 1/C^2―V plots indicated the junction was abrupt and the junction built-in potential was 0.6 V at room temperature and decreased with increasing temperature. The solar cell parameters have been calculated for the fabricated cell as V_oc = 0.50 V, J_sc = 14.53 mA cm^-2, FF = 0.32 and η = 4.65% under an illumination of 50 mW cm^-2.