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소지순일 ( Koike Junichi ) 중앙대학교 한국문화유산연구소(구 중앙대학교 한국민속학연구소) 2010 중앙민속학 Vol.- No.15
In this article, I discuss looked back on the study of the SEKEN-BANASH(世間話) in the Japanese folklore and discussed it about the possibility. At first I spoke an oral tradition literary study of Kunio Yanagita here. I discussed it about the point that contradicted the specialty of the SEKEN-BANASHI study succeeds in particular as city(urban) folklore. the rumor and the relations with the urban legend. The SEKENBANASHI study succeeds in particular as city(urban) folklore. Furthermore, I insisted the SEKEN-BANASHI study as a viewpoint to think about (1) A Recognition structure of the investigation, (2)The approximation with the life history study (3) A property of the communication area, is important.
小池淳一(Koike Junichi) 중앙대학교 한국문화유산연구소 2010 중앙민속학 Vol.- No.15
In this article, I discuss looked back on the study of the SEKEN-BANASHI(世間話) in the Japanese folklore and discussed it about the possibility. At first I spoke an oral tradition literary study of Kunio Yanagita here. I discussed it about the point that contradicted the specialty of the SEKEN-BANASHI. Next, I discuss the rumor and the relations with the urban legend. The SEKEN-BANASHI study succeeds in particular as city(urban) folklore. Furthermore, I insisted the SEKEN-BANASHI study as a viewpoint to think about (1) A Recognition structure of the investigation, (2)The approximation with the life history study (3) A property of the communication area, is important.
이정민,송윤흡,Yuta Saito,Yuji Sutou,Junichi Koike 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.62 No.9
A selective switching device utilizing a phase-change material was investigated. In this work, we present a new concept to realize serially a selective switching and memory operation in a multiple phase-change memory with only phase-change materials without any semiconductor switching device. A phase-change material for selective switching can be expected to have a higher resistance amorphous phase and to show lower melting and crystallization temperatures than a phase-change material for a memory. Here, we present a structural method to obtain the above requirements. In addition, we confirm the switching operation by a selective current pulse for multiple phase-change materials from the experiment. From these results, we expected that one of the multiple phasechange materials can be replaced in a switching device without the need for an additional selective device, and that such a device would be feasible for 3-dimensional PCM architecture.