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Stoumpos, Constantinos C.,Frazer, Laszlo,Clark, Daniel J.,Kim, Yong Soo,Rhim, Sonny H.,Freeman, Arthur J.,Ketterson, John B.,Jang, Joon I.,Kanatzidis, Mercouri G. American Chemical Society 2015 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY - Vol.137 No.21
<P>The synthesis and properties of the hybrid organic/inorganic germanium perovskite compounds, AGeI<SUB>3</SUB>, are reported (A = Cs, organic cation). The systematic study of this reaction system led to the isolation of 6 new hybrid semiconductors. Using CsGeI<SUB>3</SUB> (<B>1</B>) as the prototype compound, we have prepared methylammonium, CH<SUB>3</SUB>NH<SUB>3</SUB>GeI<SUB>3</SUB> (<B>2</B>), formamidinium, HC(NH<SUB>2</SUB>)<SUB>2</SUB>GeI<SUB>3</SUB> (<B>3</B>), acetamidinium, CH<SUB>3</SUB>C(NH<SUB>2</SUB>)<SUB>2</SUB>GeI<SUB>3</SUB> (<B>4</B>), guanidinium, C(NH<SUB>2</SUB>)<SUB>3</SUB>GeI<SUB>3</SUB> (<B>5</B>), trimethylammonium, (CH<SUB>3</SUB>)<SUB>3</SUB>NHGeI<SUB>3</SUB> (<B>6</B>), and isopropylammonium, (CH<SUB>3</SUB>)<SUB>2</SUB>C(H)NH<SUB>3</SUB>GeI<SUB>3</SUB> (<B>7</B>) analogues. The crystal structures of the compounds are classified based on their dimensionality with <B>1</B>–<B>4</B> forming 3D perovskite frameworks and <B>5</B>–<B>7</B> 1D infinite chains. Compounds <B>1</B>–<B>7</B>, with the exception of compounds <B>5</B> (centrosymmetric) and <B>7</B> (nonpolar acentric), crystallize in polar space groups. The 3D compounds have direct band gaps of 1.6 eV (<B>1</B>), 1.9 eV (<B>2</B>), 2.2 eV (<B>3</B>), and 2.5 eV (<B>4</B>), while the 1D compounds have indirect band gaps of 2.7 eV (<B>5</B>), 2.5 eV (<B>6</B>), and 2.8 eV (<B>7</B>). Herein, we report on the second harmonic generation (SHG) properties of the compounds, which display remarkably strong, type I phase-matchable SHG response with high laser-induced damage thresholds (up to ∼3 GW/cm<SUP>2</SUP>). The second-order nonlinear susceptibility, χ<SUB>S</SUB><SUP>(2)</SUP>, was determined to be 125.3 ± 10.5 pm/V (<B>1</B>), (161.0 ± 14.5) pm/V (<B>2</B>), 143.0 ± 13.5 pm/V (<B>3</B>), and 57.2 ± 5.5 pm/V (<B>4</B>). First-principles density functional theory electronic structure calculations indicate that the large SHG response is attributed to the high density of states in the valence band due to sp-hybridization of the Ge and I orbitals, a consequence of the lone pair activation.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jacsat/2015/jacsat.2015.137.issue-21/jacs.5b01025/production/images/medium/ja-2015-01025x_0013.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/ja5b01025'>ACS Electronic Supporting Info</A></P>
Ferromagnetic Properties of Chalcopyrite (Zn1-xMNx) GeP2 Semiconductors
성래 조,B. J. Kim,Byung-Chun Choi,Gi-Beom Cha,John B. Ketterson,Jung-Hyun Jeong,Soon Cheol Hong,Sungyoul Choi,Y. C. Kim,Yunki Kim 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
We have observed a room-temperature ferromagnetism in chalcopyrite (Zn$_{1-x}$Mn$_x$)GeP$_2$ semiconductors with T$_C$ = 312 K. At temperatures below 47 K, sample for $x$ = 0.056 shows a transition to the antiferromagnetic state, so that ferromagnetism is well defined to be present between 47 K and 312 K. However, in a slightly p-type doped (Zn$_{1-x}$Mn$_x$)GeP$_2$, ferromagnetic state is most stable at low temperatures.
Mn-doped ZnGeAs2 and ZnSnAs2 Single Crystals: Growth and Electrical and Magnetic Properties
Sungyoul Choi,최정용,John B. Ketterson,Soon Cheol Hong,Sunglae Cho,Yunki Kim 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
We have fabricated Mn-doped chalcopyrite ZnGeAs$_2$ and ZnSnAs$_2$ single crystals using vertical temperature gradient method. We have found out that Mn-doped ZnGeAs$_2$ and ZnSnAs$_2$ single crystals showed room-temperature ferromagnetism with Curie temperature of 333 and 329 K, respectively.
Ferrimagnetism in strained Fe2As thin films on Si(001)
Hwang, Younghun,Choi, Jeongyong,Cho, Sunglae,Ketterson, John B.,Tsai, C.-C. American Institute of Physics 2009 JOURNAL OF APPLIED PHYSICS - Vol.105 No.7
<P>We present the structural and magnetic properties of Fe2As thin films grown on Si(100) by molecular beam epitaxy. From the reflection high-energy electron diffraction and x- ray diffraction patterns, the orientation of Fe2As film on Si(100) was found to be a c-axis in the tetragonal crystal structure. The tetragonal Fe2As thin film exhibited ferrimagnetic (FIM) ordering at room temperature. The magnetic moment of Fe2As was 0.1 mu(B)/unit cell determined from the saturated magnetic moment. The observed FIM in Fe2As films was attributed to the strain in the film. (c) 2009 American Institute of Physics. [DOI: 10.1063/1.3068626]</P>