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- 저자 : Jiro Yamamoto (검색결과 4 건)
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Electroluminescence from n-Zn(Mg,Cd)O/ p-4H-SiC:Al Heterojunctions
Kenji Yamamoto,Toshiya Ohashi,Atsushi Nakamura,Temmyo Jiro 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Electroluminescence (EL) from n-Mg0:18Zn0:82O/ n-Zn(Mg,Cd)O/ p-4H-SiC:Al heterojunction diodes fabricated by using remote-plasma-enhanced metal-organic chemical-vapor deposition was measured to investigate some recombination processes of hole injection by changing the bandgap of n-Zn(Mg,Cd)O. EL emissions from the heterojunction utilizing n-Zn1-xCdxO (x > 0.07) were observed to coincide with the photoluminescence (PL) emission energy of the corresponding alloy content due to hole injection from the p-4H-SiC:Al to the n-Zn1-xCdxO layer in the type-I het-erojunctions. However, broad EL emissions from the type-II heterojunctions utilizing n-ZnO and n-Mg0:12Zn0:88O were observed at around 2.8 eV. These broad ELs were caused by the recombination of carriers in p-4H-SiC:Al due to electron injection from n-Zn(Mg,Cd)O to p-4H-SiC:Al and by the recombination of spatially separated carriers at the heterointerface.
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Pilot Study for Considering Subthalamic Nucleus Anatomy during Stimulation Using Directional Leads
Takashi Asahi,Kiyonobu Ikeda,Jiro Yamamoto,Hiroyuki Tsubono,Shuji Sato 대한파킨슨병및이상운동질환학회 2019 Journal Of Movement Disorders Vol.12 No.2
ObjectiveDirectional leads are used for deep brain stimulation (DBS). Two of the four contacts of the leads are divided into three parts, enabling controlled stimulation in a circumferential direction. The direction of adverse effects evoked by DBS in the subthalamic nucleus (STN) and stimulation strategies using directional leads were evaluated. MethodsDirectional leads were implanted into the bilateral STN of six parkinsonian patients (1 man, 5 women; mean age 66.2 years). The contact centers were located within the upper border of the STN, and the locations were identified electrically using microrecordings. Adverse effects were evaluated with electrical stimulation (30 μs, 130 Hz, limit 11 mA) using the directional part of each lead after surgery, and the final stimulation direction was investigated. Unified Parkinson’s disease rating scale (UPDRS) scores were evaluated before and after DBS. ResultsFifty-six motor and four sensory symptoms were evoked by stimulation; no adverse effect was evoked in 14 contacts. Motor and sensory symptoms were evoked by stimulation in the anterolateral direction and medial to posterolateral direction, respectively. Stimulation in the posteromedial direction produced adverse effects less frequently. The most frequently used contacts were located above the STN (63%), followed by the upper part of the STN (32%). The mean UPDRS part III and dyskinesia scores decreased after DBS from 30.2 ± 11.7 to 7.2 ± 2.9 and 3.3 ± 2.4 to 0.5 ± 0.8, respectively. ConclusionThe incidence of adverse effects was low for the posteromedial stimulation of the STN. Placing the directional part of the lead above the STN may facilitate the control of dyskinesia.
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Fabrication and EL Emission of ZnO-Based Heterojunction Light-Emitting Devices
Sandip Gangil,Atsushi Nakamura,Kenji Yamamoto,Toshiya Ohashi,Jiro Temmyo 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
Nitrogen-doped p-type MgZnO films were successfully realized on a-plane sapphire substrates and were used in an n-MgyZn1-yO/n-Zn1-xCdxO/p-MgyZn1-yO:N/p-SiC heterojunction structure to act as barrier layer leading to sharpening of the electroluminescence (EL) in terms of reducing the full width at half maximum (FWHM). The X-ray photoelectron spectroscopy (XPS) analysis of the c-axis-oriented nitrogen-doped MgZnO film confirmed the presence of Mg2+ at 49.8 eV in Mg (2p region) in the ZnO:N lattice, replacing Zn2+. Zn-N formations were clearly visible in the Zn (2p3=2) region and the signal for nitrogen-replacing oxygen (NO) emerged at 396.9 eV. With respect to ZnO:N polar films (n-type in as-grown conditions), as-grown polar MgZnO:N films had the upper hand by holding a p-type nature due to Mg incorporation ascribed to the formation of Mg- related (interactions of Mg with N) tri-atomic acceptor-donor-acceptor-configured p-type supportive complexes. The nitride formations were noticeable in the X-ray diffraction (XRD) spectra. The formation of complexes and their effects are discussed in this paper. Nitrogen-doped p-type MgZnO films were successfully realized on a-plane sapphire substrates and were used in an n-MgyZn1-yO/n-Zn1-xCdxO/p-MgyZn1-yO:N/p-SiC heterojunction structure to act as barrier layer leading to sharpening of the electroluminescence (EL) in terms of reducing the full width at half maximum (FWHM). The X-ray photoelectron spectroscopy (XPS) analysis of the c-axis-oriented nitrogen-doped MgZnO film confirmed the presence of Mg2+ at 49.8 eV in Mg (2p region) in the ZnO:N lattice, replacing Zn2+. Zn-N formations were clearly visible in the Zn (2p3=2) region and the signal for nitrogen-replacing oxygen (NO) emerged at 396.9 eV. With respect to ZnO:N polar films (n-type in as-grown conditions), as-grown polar MgZnO:N films had the upper hand by holding a p-type nature due to Mg incorporation ascribed to the formation of Mg- related (interactions of Mg with N) tri-atomic acceptor-donor-acceptor-configured p-type supportive complexes. The nitride formations were noticeable in the X-ray diffraction (XRD) spectra. The formation of complexes and their effects are discussed in this paper.
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