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RISS 인기검색어
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- 저자 : Jing Sicheng (검색결과 3 건)
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Chen Wen,Jing Sicheng,Wang Yu,Pan Jinghua,Li Wei,Bian Baoan,Liao Bin 한국물리학회 2022 Current Applied Physics Vol.43 No.-
Two-dimensional materials have attracted great attention because of their ultra-thin atomic layer thickness and high carrier mobility. In this work, we investigated the electronic transport of in-plane (IP) heterojunction based on Cu/Blue Phosphorus (BlueP), and the results suggest the metallization at the IP Cu/BlueP contact interface and a small Schottky barrier. Then, we investigated the performance of 5.1 nm IP BlueP Schottky barrier field-effect transistors (SBFET) with different dielectrics (SiO2, Al2O3, Y2O3, and La2O3) using quantum transport simulations. The results show that IP BlueP SBFETs with four dielectrics satisfy the off-state requirement of the International Technology Roadmap for Semiconductors (ITRS) for the high-performance (HP) device. However, the on-state current of only IP BlueP SBFET with La2O3 satisfies the requirements of ITRS. This will provide a reference for designing BlueP SBFETs.
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Wen Wang,Boyu Li,Sicheng Zhai,Juan Xu,Zuozhe Niu,Jing Xu,Yan Wang 대한금속·재료학회 2018 METALS AND MATERIALS International Vol.24 No.5
In this paper, FeSiBAlNiCo x ( x = 0.2, 0.8) high-entropy alloy (HEA) powders were fabricated by mechanical alloying process,and the powders milled for 140 h were sintered by spark plasma sintering (SPS) technique. The microstructures andproperties of as-milled powders and as-sintered samples were investigated. The results reveal that the fi nal milling products(140 h) of both sample powders present the fully amorphous structure. The increased Co contents obviously enhance theglass forming ability and thermal stability of amorphous HEA powders, which are refl ected by the shorter formation time offully amorphous phase and the higher onset crystallization temperature, respectively. According to coercivity, the as-milledFeSiBAlNiCo x ( x = 0.2, 0.8) powders (140 h) are the semi-hard magnetic materials. FeSiBAlNiCo 0.8 HEA powders possessthe highest saturation magnetization and largest remanence ratio. The SPS-ed products of both bulk HEAs are composedof body-centered cubic solid solution, and FeSi and FeB intermetallic phases. They possess the high relative density above97% and excellent microhardness exceeding 1150 HV. The as-sintered bulks undergo the remarkable increase in saturationmagnetization compared with the as-milled state. The SPS-ed FeSiBAlNiCo 0.8 HEA exhibits the soft magnetic properties. The electrochemical corrosion test is carried out in 3.5% NaCl solution. The SPS-ed FeSiBAlNiCo 0.2 HEA reveals the betterpassivity with low passive current density, and the higher pitting resistance with wide passive region.
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Wang Yu,Chen Wen,Jing Sicheng,Pan Jinghua,Wang Danni,Ma Zelong,Bian Baoan 한국물리학회 2023 Current Applied Physics Vol.52 No.-
Boron Phosphide is reported to be a semiconductor material with anisotropy, tunable bandgap, and high carrier mobility. We study the performance of 5.1 nm metal–oxide–semiconductor field-effect transistors (MOSFETs) based on boron phosphide using quantum transport simulation. The calculated results show that the on-state current can fulfill the requirements of the International Semiconductor Technology Roadmap (ITRS) for high-performance (HP) devices at the optimal doping concentration, but the gate control capability is not ideal. Furthermore, it is found that the gate control capability and on-state current can be significantly improved with the length being 1 nm by using the underlap (UL) structure. We also study the performance of boron phosphide MOSFET with different gate lengths (5–8 nm), and the results suggest that the shorter the gate length, the worse the gate control capability. Interestingly, the p-type boron phosphide MOSFET always outperforms the n-type MOSFET. This work will provide a new reference for the development of two-dimensional (2D) semiconductor devices.
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