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RISS 인기검색어
- 검색키워드
- 저자 : Jiahua Min (검색결과 5 건)
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Effect of Au film and absorption groups on minority carrier life of porous silicon
Yue Zhao,Linjun Wang,Jiahua Min,Weimin Shi 한국물리학회 2010 Current Applied Physics Vol.10 No.3
In this paper, the samples were prepared with or without metal assistance in different time. The effect of Au film and absorption groups on minority carrier life of porous silicon was studied by using l-PCD measurements,and the result was further proved by FTIR spectra and SEM images. The results were showed that the existed hydrogen-related groups on the surface of porous silicon would decrease the minority carrier life and the grid Au film also can decrease the minority carrier life. The minority carrier life may be controlled by the more effective factor, metal elements or absorption groups.
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In-Doped CdZnTe Crystal Growth under Controlled Te Partial Pressure
Yongbiao Qian,Wenbin Sang,Gang Li,Jiahua Min,Zhubin Shi,Chenying Zhou 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
In-doped CdZnTe (CZT) crystals have been investigated under controlled Te partial pressure. The dependence of the electrical properties on the In dopant concentration under fixed Te partial pressure and the dependence on Te partial pressure under fixed In dopant concentration are presented. The optimized growth parameters, such as Te partial pressure, In dopant concentration, etc., were obtained for preparing In-doped CZT crystal of high resistivity up to 1010 cm. In addition, based on an In-doped compensation mechanism in CZT crystals is discussed.
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The effect of Al and B on the luminescent property of porous silicon
Yue Zhao,Zhiyong Lv,Linjun Wang,Jiahua Min,Weimin Shia,Xudong Lu 한국물리학회 2010 Current Applied Physics Vol.10 No.3
In this paper, we studied the PL property and the surface morphology of porous silicon prepared from Ntype single silicon wafers coated with and without Al film. By introducing the Al film on the surface of silicon wafer before etching, the morphology of porous silicon exhibits obvious discrimination compared with that of the conventional porous silicon, which can be explained by the formation mechanism of the samples, and the emission property of two-type porous silicon also showed the clear difference, which may be attributed to the discrepancy in the structural configuration of the samples. Furthermore, it was found that the blue emission decreased and the green emission was almost completely quenched after boron-particle deposition, which is attributed to the structural change or annihilation of the emission defects during annealing process.
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In uence of In dopant on PL Spectra of CdZnTe Crystals
Jianyong Teng,Wenbin Sang,Gang Li,Zhubin Shi,Jiahua Min,Dongni Hu,Yongbiao Qian 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
Photoluminescence (PL) spectra are used to characterize the high resistivity of an In-doped CdZnTe (CZT) crystal. The features of the PL spectra vary with changing In-dopant concentration, indicating that the In-dopant concentration has a great impact on the defect type and density and on the extent of compensation in the In-doped CZT crystal. With the addition of In donors, a new sharp neutral donor bound exciton [D0, X] peak at 1.65 eV, corresponding to In substituting defect (In+ Cd) and a new defect complex band centered at 1.505 eV, related to the singly negative complex (VCd-InCd)- are observed. Meanwhile, the intensity and position of the feature peaks in PL spectra vary with the change of the In dopant concentration, representing the changes of the defect type and density and the extent of compensation in the crystal. It conrms that the Cd vacancy or residual impurity acceptors are dominantly compensated by In donors. The measured conduction type and carrier densities are the results of compensation between Cd vacancies and In donors and Te antisites, which are related to the In-dopant concentration and the stoichiometry for the CZT crystal. Photoluminescence (PL) spectra are used to characterize the high resistivity of an In-doped CdZnTe (CZT) crystal. The features of the PL spectra vary with changing In-dopant concentration, indicating that the In-dopant concentration has a great impact on the defect type and density and on the extent of compensation in the In-doped CZT crystal. With the addition of In donors, a new sharp neutral donor bound exciton [D0, X] peak at 1.65 eV, corresponding to In substituting defect (In+ Cd) and a new defect complex band centered at 1.505 eV, related to the singly negative complex (VCd-InCd)- are observed. Meanwhile, the intensity and position of the feature peaks in PL spectra vary with the change of the In dopant concentration, representing the changes of the defect type and density and the extent of compensation in the crystal. It conrms that the Cd vacancy or residual impurity acceptors are dominantly compensated by In donors. The measured conduction type and carrier densities are the results of compensation between Cd vacancies and In donors and Te antisites, which are related to the In-dopant concentration and the stoichiometry for the CZT crystal.
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Passivation Layer of CdZnTe as Studied by Spectroscopic Ellipsometry
Jianyong Teng,Wenbin Sang,Yue Lu,Yanyan Lou,Jiahua Min,Xiaoyan Liang,Kaifeng Qin,Yongbiao Qian 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
An oxidized layer was obtained on a cadmium zinc telluride (CZT) wafer by using chemical etching first in a KOH-KCl solution and then in an NH4F/H2O2 solution. The oxidized layer on the CZT obtained by using this method was analyzed by using ex-situ spectroscopic ellipsometry (SE) for the first time. In particular, the optical constants and the thickness of the chemical oxidized layer were obtained as functions of the oxidizing time.
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