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Song, Jaewoo,Guella, Ilaria,Kwon, Ki-Yung,Cho, Hyunsoo,Park, Rojin,Asselta, Rosanna,Choi, Jong Rak Lippincott Williams Wilkins, Inc. 2009 Blood coagulation & fibrinolysis Vol.20 No.2
Hereditary coagulation factor V deficiency is a rare bleeding disorder characterized by extremely low levels of functional and immunoreactive factor V in plasma associated with moderate-to-severe bleeding symptoms. The genetic bases of factor V deficiency have been characterized only in a limited number of cases and the majority of causative mutations are truncating mutations providing only limited information about the function of subdomains and of individual residues. Here, we present the first report on a Korean family with inherited factor V deficiency. The proband is a 25-year-old man who showed normal coagulation factor levels except those for factor V antigen and activity (3 and 4%, respectively), and was only suffering from bleeding after tooth extraction. Direct sequencing of the factor V gene disclosed the already known nonsense mutation (R1133X) and a novel in-frame 6-bp deletion (6116-6121delGAACAG, corresponding to the amino-acid deletion N1982-S1983) located in the factor V C1 domain; both mutations were found in the heterozygous state. The structural and functional importance of the in-frame deletion was examined by constructing a molecular model based on the crystal structure of bovine activated factor V that has been inactivated by activated protein C. N1982 and S1983 are located on a loop that is exposed on the surface of the C1 domain, and are in close contact with another loop belonging to the A3 domain. Even though the detailed mechanism of the association of the in-frame deletion of our patient and factor V deficiency needs further investigation, this model suggests the possibility that the N1982-S1983 deletion could destabilize the C1–A3 interaction by preventing the potential formation of hydrogen bonds between K1980 and N1986 of the C1 domain with D1604 of the A3 domain. Also, because N1982 is strongly expected to be N-glycosylated judging from its structural homology to factor VIII, loss of this residue can influence proper folding of factor V, resulting in unstable structure, which is vulnerable to intracellular degradation.
Comparative Analysis of Afferent Loop Obstruction Following Pancreaticoduodenectomy
Ki Byung Song,Daegwang Yoo,Young-Joo Lee,Dae Wook Hwang,Jae Hoon Lee,Sang Hyun Shin,Jaewoo Kwon,Yejong Park,Seung Jae Lee,Guisuk Park,Sarang Hong,Jong Woo Lee,Woo Young Youn,Kyungyeon Hwang,Song Cheol 대한외과학회 2018 대한외과학회 학술대회 초록집 Vol.2018 No.11
Jaewoo Shim,Song, I.,Jung, W.-S,Nam, J.,Leem, J. W.,Yu, J. S.,Kim, D. E.,Cho, W. J.,Kim, Y. S.,Jun, D.-H,Heo, J.,Park, W.,Jin-Hong Park,Saraswat, K. C. IEEE 2013 IEEE electron device letters Vol.34 No.1
<P>In this letter, we investigate the electrical behavior of vacancy <I>V</I><SUB>Ge</SUB> defects in Ge at various thermal annealing conditions through electrochemical capacitance-voltage analysis. Then, the effects of the annealing process on Ge n<SUP>+</SUP>/p junction diodes were also studied with <I>J</I>-<I>V</I>, transmission electron microscopy, and secondary ion mass spectroscopy measurements in the aspects of point-defect healing and dopant diffusion/loss phenomena. The <I>V</I><SUB>Ge</SUB> defects tend to heal by recombining with Ge interstitial atoms as the annealing process temperature increases. However, the diffusion/loss problems of P atoms in Ge become severe at above 500<SUP>°</SUP>C. Therefore, an optimal postfabrication annealing process at 600<SUP>°</SUP>C is proposed in terms of point-defect healing and dopant diffusion/loss reduction.</P>
Song, Eunyoung,Lee, Euiju,Bu, Yongmin,Lee, Junhee,Shin, Seungwon,Yoo, Junghee,Park, Jaewoo,Kwon, Jinhyeok Hindawi Publishing Corporation 2013 Evidence-based Complementary and Alternative Medic Vol.2013 No.-
<P>The purpose of this study is to establish a protocol of retention-enema experiments and evaluate the antihypertensive effect and the safety of <I>Gwakhyangjeonggi-san</I> retention enema. Normal and spontaneously hypertensive rats (SHRs) were divided into treatment and control groups, respectively. We applied the <I>Gwakhyangjeonggi-san</I> extract by decoction and 0.9% NaCl in each group, estimated the blood pressure and body weight, and performed HPLC analysis. ALT, AST, BUN, and creatinine were examined. The systolic blood pressure within each group in normal rats differed significantly in time effect, and so did the diastolic blood pressure in the treatment group of normal rats. The systolic, diastolic, and mean blood pressure showed significant differences in group effect in the treatment group of the SHRs. The time effect of the body weight in both groups of normal rats differed significantly, so did group × time and time effects in both groups of SHRs. AST, ALT, BUN, and creatinine showed no significant difference between groups. We concluded that the <I>Gwakhyangjeonggi-san</I> retention enema has a hypotensive effect in normal rats within the regular range of blood pressure, but an antihypertensive effect in SHRs. Also, the intervention is safe and does not affect the liver and kidney functions in normal rats.</P>
Jaewoo Lee,Jong-In Song,Jeong Hoon Kim,Jeongseon Lee 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.43 No.51
Fabrication and structure-based hybrid- small signal modeling of a submicron InGaP/GaAs heterojunction bipolar transistor (HBT) are discussed. The submicron InGaP/GaAs HBTs were fabricated using electron-beam lithography. The emitter mesa was realized by using H3PO4-based and NH4OH-based wet etching solutions. The fabricated submicron InGaP/GaAs HBTs had an emitter area of 0.5 2 m2 and emitter-base spacings of 0.25 m, 0.85 m, 2 m, and 4 m. The extracted maximum oscillation frequencies (fmax) of the submicron InGaP/GaAs HBTs having emitter-base spacings of 0.25 m, 0.85 m, 2 m, and 4 m were 222.5 GHz, 167.5 GHz, 69.3 GHz, and 41 GHz, respectively, at Ic = 1 mA and Vce = 2 V.
Exploiting flash memory for reducing disk power consumption in portable media players
Jaewoo Kim,Ahron Yang,Minseok Song IEEE 2009 IEEE transactions on consumer electronics Vol.55 No.4
<P>Portable media players are increasingly using hard disk drives (HDD) to meet their storage requirements, but HDDs consume a significant amount of energy. Therefore video frames are prefetched into dynamic random access memory (DRAM) to allow the disk to go into low-power mode; but most mobile systems have limited DRAM, so little energy is actually saved in this way. We propose two new energy saving schemes: one improves the utilization of DRAM in storing prefetched frames, and the other extends this approach by making use of auxiliary flash memory. Simulations show that deploying a reasonable amount of auxiliary flash reduces disk energy consumption by up to 86% compared with conventional prefetching schemes.</P>