http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Ga-WonLee,Jae-HeeLee,Young-MiKim,Won-ChangLee,Hyung-KiKim,Koung-DongYou,Chan-KwangPark 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.6
We have studied the effect on the gate oxide quality and the MOSFET behavior of eld oxide edges in a shallow trench isolation (STI) structure. We found that a buildup of positive charges was one of the reasons for the oxide degradation caused at the active-eld edge where a kink was formed. In the MOSFET characteristics, the inverse narrow width eect (INWE) was enhanced in NMOSFET's, and the narrow width eect (NWE) was enhanced in PMOSFET's. To improve the gate oxide integrity, after gate formation, we deposited an organic low-k insulator, called SiLK as an interlayer dielectric, followed by low-temperature annealing. SiLK seemed to cure the gate oxide and to prevent the build-up positive charge at the active-field edge. Although SiLK application brings reliability concerns, the results are still acceptable.
Current Dispersion E ects of Planar-Type AlGaN/GaN HFET's Grown by MOCVD
Chang-SeokKim,Jin-SikYun,Byung-KwonChoi,Jae-EungOh,Sung-BumBae,Jung-HeeLee,Jong-WookKim,Jae-SeungLee,Jin-HoShin 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.2
Low frequency-transconductance dispersion and pulsed I-V measurements have been taken on a planar-type an AlGaN/GaN heterostructure field-effect transistor (HFET) to study the effect of trap states on its current-voltage (I-V) characteristics. The transconductance as a function of frequency ranging from 1 Hz to 100 kHz was measured at various temperatures and bias conditions. We have observed the existence of electron traps associated with the surface states or bulk traps. These electron traps are responsible for the decrease of the transconductance and the drain current collapse. From the Arrhenius plot, a relatively slow state with an activation energy of 47.2 meV has been identified. To expect microwave power performance of the device, the pulsed I-V characteristic was measured in dierent class operations. A model to explain the observed current collapse has been suggested.