http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
High-energy ion induced physical and surface modifications in antimony sulphide thin films
S. Subramanian,M. Balaji,P. Chithra Lekha,K. Asokan,D. Kanjilal,Indra Sulania,Jai Prakash,D. Pathinettam Padiyan 한국물리학회 2010 Current Applied Physics Vol.10 No.4
Sb2S3 thin films prepared by electrodeposition on indium tin oxide coated glass substrate were irradiated with 150 MeV Ni11+ ions for various fluence in the range of 1011–1013 ions/㎠. The modifications in the structure, surface morphology and optical properties have been studied as a function of ion fluence. X-ray diffraction (XRD) analysis indicates a shift in the (2 4 0) peak position towards lower diffraction angle and a decrease in grain size with increase in ion fluence. Presence of microcracks due to irradiation induced grain splitting effect has been observed from the SEM micrograph at higher ion fluence. The optical absorbance spectrum revealed a shift in the fundamental absorption edge and the band gap energy increased from a value of 1.63 eV for as-deposited films to 1.80 eV for the films irradiated with 1013 ions/㎠.