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- 저자 : Ilke Taşçıoğlu (검색결과 1 건)
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The effect of metal work function on the barrier height of metal/CdS/SnO2/In–Ga structures
Ilke Taşçıoğlu,S¸ emsettin Altındal,İsmail Polat,Emin Bacaksız 한국물리학회 2013 Current Applied Physics Vol.13 No.7
In order to interpret the effect of metal work function on the formation of the barrier height at metal/semiconductor (M/S) interface, the CdS/SnO2/IneGa structures with several metals (Ag, Au, Al, Te) have been investigated by using IeV characteristics at room temperature. The main electrical parameters such as ideality factor (n), zero-bias barrier height (FBo), series resistance (Rs) have been determined and compared with each other. The values of n were found to be 3.00, 2.56, 3.83, and 3.31 for Al, Ag, Te, and Au/CdS/SnO2/IneGa structures, respectively. The values of FBo were also found to be 0.489 eV, 0.490 eV,0.583 eV, 0.591 eV for Al, Ag, Te, and Au/CdS/SnO2/IneGa structures, respectively. The FBo dependence on the metal work function (Fm) was found to vary almost linearly as FBo = 0.106Fm þ 0.028. The low value of the slope S (dFB/dFM y 0.106) shows a weak relationship between FBo and Fm due to serious Fermilevel pinning in the conduction band. In addition, the IeV plots have a rectifying behavior. The rectification ratio, defined by the ratio of forward to reverse current (RR = IF/IR) measured at the same absolute bias, was found as 11.96, 20.88, 35.82, and 75.61 for Al, Ag, Te, Au/CdS/SnO2/IneGa diodes, respectively. In addition, the values of Rs were determined from Ohm’s Law and Norde’s method. Analysis of IeV characteristics confirm that using of different metal (Al, Ag, Te, Au) has significant effect on electrical parameters of such devices.
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