http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Colleaux, Florian,Lee, Jungil,Yu, Byung Yong,Han, Ilki,Choi, WonJun,Song, Jin Dong,Ghibaudo, Gerard American Scientific Publishers 2008 Journal of Nanoscience and Nanotechnology Vol.8 No.10
<P>After rapid thermal annealing (RTA), deep levels were found to be generated in Au/GaAs Schottky diodes embedded with InAs quantum dots grown by migration enhanced molecular beam epitaxy (MEMBE). From the corner frequency of the 1/f2 part of the low-frequency noise specrtral density, the locations of the deep levels were estimated to be 0.58, 0.61, and 0.66 eV below the conduction band edge for the samples without quantum dot layer, with quantum dot layer and capping layer thickness of 0.8 microm, and with quantum dot layer and the capping layer thickness of 0.4 microm, respectively. RTA also lowered the Schottky barrier height.</P>
GaAs droplet quantum dots with nanometer-thin capping layer for plasmonic applications
Park, Suk In,Trojak, Oliver Joe,Lee, Eunhye,Song, Jin Dong,Kyhm, Jihoon,Han, Ilki,Kim, Jongsu,Yi, Gyu-Chul,Sapienza, Luca IOP 2018 Nanotechnology Vol.29 No.20
<P>We report on the growth and optical characterization of droplet GaAs quantum dots (QDs) with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the QDs obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic temperatures show optically stable, sharp and bright emission from single QDs, at visible wavelengths. Given the quality of their optical properties and the proximity to the surface, such emitters are good candidates for the investigation of near field effects, like the coupling to plasmonic modes, in order to strongly control the directionality of the emission and/or the spontaneous emission rate, crucial parameters for quantum photonic applications.</P>