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Mechanistic Details of Atomic Layer Deposition (ALD) Processes
Mingde Xu,Francisco Zaera,Byung-Chang Kang,Hugo Tiznado,Ilkeun Lee,Menno Bouman 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.3
Several examples are provided where the reaction mechanisms of atomic layer deposition (ALD) processes have been characterized by a combination of surface-sensitive techniques. In the first, a proposal is advanced for the layer-by-layer growth of metal films using metal carbonyl precursors and hydrogen as a carbon monoxide displacement agent. For copper film growth, the use of amidinate complexes has being characterized. A third example comprises the deposition of TiN films from TiCl4 and ammonia. Finally, the use of Zr(EtMe)4 as a precursor for zirconium nitride ALD film growth on high surface-area silica is briefly explored.
Ramirez-Gonzalez, Daniel,Cruz-Rivera, Jose de J.,Tiznado, Hugo,Rodriguez, Angel G.,Guillen-Escamilla, Ivan,Zamudio-Ojeda, Adalberto Techno-Press 2020 Advances in nano research Vol.9 No.1
In this work, we report the use of caffeine as an alternative source of nitrogen to successfully dope graphene (quaternary 400.6 eV and pyridinic at 398 eV according XPS), as well as the growth of silver nanowires (in-situ) in the surface of nitrogen doped graphene (NG) sheets. We used the improved graphene oxide method (IGO), chemical reduction of graphene oxide (GOx), and impregnation with caffeine as source of nitrogen for doping and subsequently, silver nanowires (NW) grow in the surface by the reduction of silver salts in the presence of NG, achieving a numerous of growth of NW in the graphene sheets. As supporting experimental evidence, the samples were analyzed using conventional characterization techniques: SEM-EDX, XRD, FT-IR, micro RAMAN, TEM, and XPS.