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Jin-Woong Kim,Hiromi Shima,Ken Nishida,Takashi Yamamoto,Hiroshi Funakubo 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.3
Ba(ZrxTi1−x)O3 (BZT) thin films with different Zr contents were deposited on (100)MgO and(100)Pt/(100)MgO substrates by RF-magnetron sputtering using metal targets. The BZT thinfilms epitaxially grew on MgO substrates with only a (001)/(100) orientation and had a singleperovskite phase. In all cases, Ba/Ti ratio was stoichiometric and the BZT films possessed a densemicrostructure. The grain size decreased with increasing Zr content. At room temperature, adielectric constant as a function of the DC bais (tunability) of nearly 30% was achieved at 1 MHz;meanwhile, a relatively low dielectric loss was obtained. Moreover, after a post-annealing process,the tunability was increased significantly. These results indicate that we succeeded in depositinghigh-quality, and potential tunable ferroelectrics.