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Physicochemical and organoleptic characteristics of deep-fat fried and microwaved potato chips
Yi, Haechang,Hwang, Keum Taek,Choi, Heedon,Lim, Hak-Tae The Korean Society for Applied Biological Chemistr 2015 Applied Biological Chemistry (Appl Biol Chem) Vol.58 No.5
This study was carried out to examine the effects of deep-fat frying and microwaving on various physicochemical parameters and sensory characteristics of potato chips. The moisture content of deep-fat fried potato chips was found to decrease faster than that of microwaved chips during the cooking process. The fat content of the deep-fat fried potato chips increased with increasing frying time, while that of microwaved chips changed little. Microwaving was found to increase the hardness and lower the acrylamide content of the chips. Microwaving also resulted in chips with a lower browning index and a lighter color than deep-fat fried chips. Although deep-fat fried chips were found to be superior in terms of appearance, color, and overall acceptability, no significant differences were determined in the taste and crispiness between deep-fat fried and microwaved potato chips. Our findings indicate that microwaving as a cooking method has the potential to yield potato chips with low acrylamide levels, low fat content, and a desirable texture. Microwaving can therefore be considered a suitable method of preparing potato chips for modern people who consume excessive fats and oils and are interested in healthier and high-quality products.
Optical properties of InAs quantum dots grown on InP substrates
정현식,윤의준,Heedon Hwang,Kwangmin Park,Yu Jin Jeon 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.32
InAs quantum dots (QD's) grown on InP substrates are one of the promising materials systems for 1.55-m optical communication devices and QD infrared photodetectors. Compared to the InAs/GaAs pair, InAs/InP has a smaller (3.2 %) lattice mismatch, resulting in the formation of relatively larger QD's. We have studied the optical properties of the InAs/InP QD's using photoluminescence measurements. The dependence of the optical properties on the growth conditions, including growth temperatures, doping, and GaAs overlayers, is systematically investigated. It is found that there is an optimal temperature to obtain the maximum QD density, due to the competition between the surface diusion and the As/P exchange reaction.