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Large-Signal MOSFET Modeling and Parameter Extraction for High-Frequency IC Design
Seong-Hearn Lee,Cheonsoo Kim,Hyun-Kyu Yu 에스케이텔레콤 (주) 2002 Telecommunications Review Vol.12 No.1
We propose a new MOSFET large-signal model including the substrate network and bias-dependent gate-drain capacitance (Cgd) for RF IC design applications. In addition, an accurate parameter extraction technique is developed to apply for this BSIM3v3 RF model. The superiority of the substrate network to conventional ones is verified by observing good agreements between measured and modeled effective drain-source resistance and capacitance up to 10 GHz. Better agreements with measured power gain are achieved by using the bias-dependent Cgd model rather than the bias-independent one, verifying the accuracy of the proposed model and extraction technique.
Gate-Bias-Dependences of MOSFET Model Parameters Extracted from S-Parameters
Lee,Seong Hearn,Yu,Hyun Kyu 대한전자공학회 1997 ICVC : International Conference on VLSI and CAD Vol.5 No.1
The gate voltage-dependencies of MOSFET model parameters are obtained by performing the novel extraction method using analytic Z-parameter formulations for parasitics and Y-parameter ones for intrinsic parameters without optimization process. The gate voltage-dependence in the saturation region is proven to be understandable under the background of a MOSFET theory including the short-channel effects.
Lee,Seong Hearn,Rhee,Heung Soo,Ryum,Byung R.,Kang,Sang Won,Kwon,Oh Joon,Lee,Jin Hyo 대한전자공학회 1993 ICVC : International Conference on VLSI and CAD Vol.3 No.1
We propose a direct determination method for resistances and capacitances of advanced polysilicon emitter bipoloar transistors using the simple expressions of Z parameters. This method does not require any other independent measurements or special test structures to determine device resistances and capacitances of these devices. In order to investigate the validity of this method, the extracted values of emitter and collector resistances are compared with do measured ones, and show reasonable agreement with them. Since analytical Z parameter equations are simple and compact, this method allows us to extract the resistances and capacitances of PSA bipolar transistors with greate accuracy and faster extraction.
Lee,Seong Hearn 대한전자공학회 1997 ICVC : International Conference on VLSI and CAD Vol.5 No.1
The base-collector elements in AlGaAs/GaAs HBT are directly determined by the formula of Z-parameters considering distributed base resistance and base contact impedance, without numerical optimization. Good agreement is obtained between modeled and measured data of the frequency response of Z-parameter equation. The calculated S-parameters using the extracted parameter values show good agreements with measured ones up to 26.5 GHz
SIMPLE AND ACCURATE DETERMINATION OF FORWARD TRANSIT TIME IN HBTs
Lee,Seong Hearn 대한전자공학회 1995 ICVC : International Conference on VLSI and CAD Vol.4 No.1
A simple and accurate parameter extraction method without cutoff frequency measurement is proposed for extracting the forward transit time, based on a simple equation with Z-parameters including collector resistance in the low frequency range. The measurement errors can be considerably reduced, because Z-parameters at low frequencies can be measured accurately. The conventional method requires to determine cutoff frequency and remove collector charging time while on the other hand the new method needs to determine only collector resistance.