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Electrical and Reliability Characteristics of HfO2 MOS Capacitor with Mo Metal Gate Electrode
박인성,안진호,Hankyong Ko,Taeho Lee 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.III
The electrical and reliability characteristics of a metal-oxide-semiconductor (MOS) device with high- HfO2 dielectric film were investigated with three metal electrodes. Whereas a Pt electrode has a higher work function but a smaller capacitance due to a thick interfacial layer, Ru and Mo electrodes show lower equivalent oxide thickness and smaller work function rolling off due to excellent quality of the interfacial layer. Compared to devices with a Ru electrode, the MOS capacitor with a Mo electrode exhibits higher dielectric breakdown voltage and excellent reliability characteristics.