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RISS 인기검색어
- 검색키워드
- 저자 : HARROLD, ROBERT L. (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
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BAIK, MYUNGGI,HARROLD, ROBERT L.,CHOI, CHANG B.,SLANGER, WILLIAM D.,SUNG, CHANG K.,PARK, CHUNG S. 충남대학교 생물공학연구소 1993 생물공학연구지 Vol.3 No.-
Effects of testosterone and energy restriction (30%) on enzyme activity and mRNA level of ornithine decarboxylase (ODC) were studied in 19-wkold female Sprague-Dawley rats. Testosterone implantation for 1 wk elicited a sixfold increase in ODC activity and a fourfold increase in ODC mRNA transcripts in the kidney. Energy restriction also increased renal ODC activity. Further, the 56% increase in ODC enzyme activity observed in the testosterone-implanted, energy-restricted group was greater than the 24% increase in the placebo-implanted, energy-restricted group. No changes in renal ODC mRNA levels were observed in the energyrestricted groups. These observations suggest that translational or post-translational mechanism(s) are in-volved in the greater renal OCD activity in energy-restricted rats. J. Nutr. 122: 1056-1061, 1992.
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Chiranut Sa-ngiamsak,Steve Harrold 대한전자공학회 2007 ITC-CSCC :International Technical Conference on Ci Vol.2007 No.7
A new and novel tool based on a “Physical IC design” approach is proposed. The idea of “Physical IC design” has arisen from an interest to investigate the impact of changes to transistor profile upon circuit performance. The influence of the layer doping, thickness and the geometry of the transistor can be investigated. Consequently, an optimum transistor profile for a particular application is able to be specified. The “Physical IC design” tool was implemented and embedded in a commercial CAD tool (Cadence™) environment. The purpose of this tool is to rapidly predict SPICE parameters directly from a given transistor profile; and then simultaneously and automatically run a SPICE-based simulator. This enables an IC designer to monitor the impact of changes of transistor profile upon circuit performance. An op-amp aimed for a particular second-order bandpass SCF circuit was used as an example to demonstrate the use of “Physical IC design” tool. The combination of HBT and MESFET technologies was applied in order to reduce the complexity of a highspeed, high-gain op-amp for SCF circuit based on MESFET technology. The simulations shows that a fast, simplecircuitry, low power and low voltage HBT/FET op-amp was achieved. A fast 0.5% settling time of 290 ps with 100 fF capacitive load was attained with an optimised HBT profile.
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