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Quantum Transport Simulations of CNTFETs: Performance Assessment and Comparison Study with GNRFETs
Wang, Wei,Wang, Huan,Wang, Xueying,Li, Na,Zhu, Changru,Xiao, Guangran,Yang, Xiao,Zhang, Lu,Zhang, Ting The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.5
In this paper, we explore the electrical properties and high-frequency performance of carbon nanotube field-effect transistors (CNTFETs), based on the non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. The calculated results show that CNTFETs exhibit superior performance compared with graphene nanoribbon field-effect transistors (GNRFETs), such as better control ability of the gate on the channel, higher drive current with lower subthreshold leakage current, and lower subthreshold-swing (SS). Due to larger band-structure-limited velocity in CNTFETs, ballistic CNTFETs present better high-frequency performance limit than that of Si MOSFETs. The parameter effects of CNTFETs are also investigated. In addition, to enhance the immunity against short - channel effects (SCE), hetero - material - gate CNTFETs (HMG-CNTFETs) have been proposed, and we present a detailed numerical simulation to analyze the performances of scaling down, and conclude that HMG-CNTFETs can meet the ITRS'10 requirements better than CNTs.
Quantum Transport Simulations of CNTFETs
Wei Wang,Huan Wang,Xueying Wang,Na Li,Changru Zhu,Guangran Xiao,Xiao Yang,Lu Zhang,Ting Zhang 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.5
In this paper, we explore the electrical properties and high-frequency performance of carbon nanotube field-effect transistors (CNTFETs), based on the non-equilibrium Green’s functions (NEGF) solved self - consistently with Poisson’s equations. The calculated results show that CNTFETs exhibit superior performance compared with graphene nanoribbon field-effect transistors (GNRFETs), such as better control ability of the gate on the channel, higher drive current with lower subthreshold leakage current, and lower subthreshold-swing (SS). Due to larger bandstructure-limited velocity in CNTFETs, ballistic CNTFETs present better high-frequency performance limit than that of Si MOSFETs. The parameter effects of CNTFETs are also investigated. In addition, to enhance the immunity against short - channel effects (SCE), hetero - material - gate CNTFETs (HMGCNTFETs) have been proposed, and we present a detailed numerical simulation to analyze the performances of scaling down, and conclude that HMG-CNTFETs can meet the ITRS’10 requirements better than CNTs.