http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Goumri-Said Souraya (검색결과 4 건)
- 무료
- 기관 내 무료
- 유료
-
Goumri-Said Souraya,Shah Mazhar Ali,Azam Sikander,Irfan Muhammad,Kanoun Mohammed Benali 한국물리학회 2023 Current Applied Physics Vol.49 No.-
Ternary selenide chalcogenide Tl3AsSe3 compound was identified as one of the most promising novel materials and potentially appropriate for multifunction applications. Current computational study is focused on computation of optical properties of Tl3AsX3 (X = S and Se) system where Modified Becke Johnson (mBJ) approximation is employed. The calculations of band structure revealed that both materials were indirect bandgap semiconducting materials with bandgap 1.5 eV and 1.9 eV respectively. The valence band maxima are mainly created because of Tl/As/S/Se(s/p/p/p) orbitals and conduction band is formed thanks to hybridizations of Tl/ As/S/Se(p) orbitals. The optical properties including complex dielectric function, reflectivity, energy loss function, refractive index, and real optical conductivity also calculated by using first-principles calculations. Our investigations explained that the two materials sustain their positive value of the refractive index and thus is the non-negative index of refractions, so these materials are active candidates for optoelectronic applications.
-
Sikander Azam,Saleem Ayaz Khan,Jan Minar,Souraya Goumri-Said 한국물리학회 2015 Current Applied Physics Vol.15 No.10
Due to growing demand on discovering new materials for light-emitting diodes devices, many efforts were made to discover and characterize new inorganic materials such as phosphors. Using the full potential method within density functional theory the electronic and optical properties of BaAl2Si3O4N4 and BaAlSi4O3N5 semiconductors have been investigated. The electronic structure and the optical properties of these phosphors were calculated through a reliable approach of modified Beck-Johnson (mBJ) approach. We found that BaAl2Si3O4N4 and BaAlSi4O3N5 have wide direct band gaps positioned at G about 5.846 and 4.96 eV respectively. The optical properties, namely the dielectric function, optical reflectivity, refractive index and electron energy loss, are reported for radiation up to 15 eV. Our study suggests that BaAl2Si3O4N4 and BaAlSi4O3N5 could be promising materials for applications in the LEDs devices and optoelectronics areas of research.
-
Haq, Bakhtiar Ul,Ahmed, R.,Mohamad, Mazmira,Shaari, A.,Rhee, JooYull,AlFaify, S.,Kanoun, Mohammed Benali,Goumri-Said, Souraya ELSEVIER 2017 Current Applied Physics Vol.17 No.2
<P>Highly mismatched alloys (HMAs) are getting a substantial interest of researchers because of holding competence of rapid change in physical properties with minor compositional change and consequently showing their potential for solar energy and photovoltaic applications. In the present density functional theory based work, we design HMAs from the extremely dissimilar GaP (semiconductor) and GaBi (semi metal). The alloying of the two compounds with unmatched electronic characteristics has triggered a rapid reduction in the energy gap of GaPBi. The energy gap is reduced by 39.3 meV for every 1% increase in Bi composition. The semiconductor behavior of GaPBi based HMAs is found to be transformed to semi metallic for replacing 64.6% of P atoms by Bi. Unlike the conventional alloys, the variation in the electronic energy gap of GaP1-xBix shows deviation from the Vegard's formalism. Where the optical properties are strongly influenced with the narrowing energy gap of GaPBi. For the Bi-rich GaPBi, the notable red shift is observed in optical dielectric function and absorption spectra. Moreover, the larger atomic size of Bi has enhanced the lattice parameters of Bi-rich GaPBi. The GaPBi based HMAs with tunable energy gap in the span of 2.51 eV-0 eV and the interesting optical properties highlight them prospective materials for optoelectronic applications. (C) 2016 Elsevier B.V. All rights reserved.</P>
-
Bakhtiar Ul Haq,R. Ahmed,Mazmira Mohamad,A. Shaari,이주열,S. AlFaify,Mohammed Benali Kanoun,Souraya Goumri-Said 한국물리학회 2017 Current Applied Physics Vol.17 No.2
Highly mismatched alloys (HMAs) are getting a substantial interest of researchers because of holding competence of rapid change in physical properties with minor compositional change and consequently showing their potential for solar energy and photovoltaic applications. In the present density functional theory based work, we design HMAs from the extremely dissimilar GaP (semiconductor) and GaBi (semimetal). The alloying of the two compounds with unmatched electronic characteristics has triggered a rapid reduction in the energy gap of GaPBi. The energy gap is reduced by 39.3 meV for every 1% increase in Bi composition. The semiconductor behavior of GaPBi based HMAs is found to be transformed to semimetallic for replacing 64.6% of P atoms by Bi. Unlike the conventional alloys, the variation in the electronic energy gap of GaP1-xBix shows deviation from the Vegard's formalism. Where the optical properties are strongly influenced with the narrowing energy gap of GaPBi. For the Bi-rich GaPBi, the notable red shift is observed in optical dielectric function and absorption spectra. Moreover, the larger atomic size of Bi has enhanced the lattice parameters of Bi-rich GaPBi. The GaPBi based HMAs with tunable energy gap in the span of 2.51 eVe0 eV and the interesting optical properties highlight them prospective materials for optoelectronic applications.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
