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RISS 인기검색어
- 검색키워드
- 저자 : G. Rajaram (검색결과 5 건)
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Shinde, Pritamkumar V.,Ghule, Balaji G.,Shinde, Nanasaheb M.,Xia, Qi Xun,Shaikh, Shoyebmohamad,Sarode, A. V.,Mane, Rajaram S.,Kim, Kwang Ho The Royal Society of Chemistry 2018 New journal of chemistry Vol.42 No.15
<P>The acetone gas sensor and electrochemical supercapacitor applications of bismuth oxide (Bi2O3) nanostructures, synthesised using a facile and cost-effective quaternary-beaker mediated successive ion transfer wet chemical method and deposited onto soda-lime-glass (SLG) and Ni-foam substrates, respectively, are explored. The as-deposited Bi2O3 nanostructures on these substrates exhibit polycrystalline nature and a slight change in their surface appearance (<I>i.e.</I> upright-standing nanoplates on SLG and a curvy nanosheet structure on Ni-foam), suggesting the importance of the deposition substrate in developing Bi2O3 morphologies. The Bi2O3 nanoplate gas sensor on the SGL demonstrated a room temperature sensitivity of 41%@100 ppm for acetone gas, whereas the nanosheet structure of Bi2O3 on the Ni-foam elucidated a specific capacitance of 402 F g<SUP>−1</SUP> at 2 mA cm<SUP>−2</SUP>, long-term cyclability, and rate capability with moderate chemical and environmental stability in a 6 M KOH electrolyte solution. The Bi2O3//graphite pencil-type asymmetric supercapacitor device revealed a specific capacitance as high as 43 F g<SUP>−1</SUP>, and an energy density of 13 W h kg<SUP>−1</SUP> at 793 W kg<SUP>−1</SUP> power density, turning a light emitting diode ON, with considerable full-brightness light intensity, during the process of discharging.</P>
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Gifta G.,Rani Gracia Nirmala,Rajaram S. 대한전기학회 2021 Journal of Electrical Engineering & Technology Vol.16 No.5
A fully integrated, low-power, low-noise OTA for Biosensor is proposed in this paper to detect biomedical signal using Implantable Health Devices. The proposed Operational Transconductance Amplifi er is built basedon diff erential mirror circuit. The existing IMD detects a single disorder and consumes high power resulting in need of replacement within a period of time. The output of the proposed OTA is validated under a balanced low supply voltage by means of simulation results using 180 nm, 90 nm and 45nmCMOS technology. The proposed OTA absorbs power within the range of nano watts. Comparison with the designs mentioned in the article is based on gain, noise, location, transconductance, and bandwidth. The fi ndings indicate substantial performance and improvement of the proposed OTA is related to previously published designs that are suitable for biomedical applications. The post layout simulation of the proposed integrated circuit was successfully performed.
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Improved NEH-Heuristic Job Scheduling for An Optimal System Using Meta-Heuristic GA–INSMG
Jeeva Rathanam G,Dr. A. Rajaram 보안공학연구지원센터 2016 International Journal of u- and e- Service, Scienc Vol.9 No.7
The application of simulation-optimization technique is merged with viable reality for computation of the scheduling process in a cloud environment. The optical systems are needed to be scheduled for requirement satisfaction of IOT (Internet of Things) services and demand services of QoS. Normally in the rule based scheduling algorithm are widely used to schedule the sequence process efficiently. The significance of environmental factors is simulated with meta-heuristics scheduling and processed under an accurate hypothesis of stochastic processing. In order to overcome the issues of scheduling a heuristic approach is proposed with the function to obtain a feasible high quality scheduling solution. The proposed heuristic algorithm, named INSMG, is performed and analyzed with the other heuristic algorithm. The analysis result shows the proposed algorithm efficiency and possible alternative for solving scheduling issues. This paper aims to provide a more possibilities of sequences, minimize makespan and solutions to solve the scheduling problems. Moreover the scheduling process is evaluated by the improved meta-heuristic GA for better schedules to prove the efficiency and better performances than the existing system.
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Patil Deepak Rajaram,Park Sung Hoon,Hwang G.-T.,Ryu Jungho 한국세라믹학회 2022 한국세라믹학회지 Vol.59 No.3
Piezoelectric coefficients dij and gij, the key parameters of the piezoelectric constituent of magnetoelectric (ME) composites, strongly influence their ME coupling. Considering this fact, we adopted three different types of piezoelectric materials with different crystallographic orientations, namely, 31-, 32-, and 15-mode PMN-PZT single crystals, to fabricate ME laminates. ME laminates can be easily fabricated using 31- and 32-mode PMN-PZT crystals, but it is difficult to fabricate them using 15-mode PMN-PZT because of the challenges in generating the 15-shear mode. In this study, 15-shear mode ME laminates were fabricated by sandwiching 15-mode PMN-PZT single crystals between Metglas and Ni, both of which exerted opposing magnetostrictive stresses on the 15-mode PMN-PZT to generate two-sided shear vibrations in it. Prior to the fabrication, the number of Metglas layers was optimized, owing to its differing thickness from that of Ni, to generate equal magnetostriction at the same applied DC magnetic field. ME laminates fabricated using two-layer (2L) and three-layer (3L) Metglas exhibited a maximum ME voltage coefficient (αME) of 0.04 V/cm Oe. In contrast, the αME values of ME laminates fabricated using 31- and 32-mode PMN-PZT single crystals were 0.46 V/cm Oe and 1.45 V/cm Oe, respectively, much higher than that of the 15-mode ME laminate. The small ME coupling in the 15-mode ME composite can be attributed to the unideal shear mode generated in the ME laminate.
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Poreddy Chaitanya Akshara,M. Ghanashyam Krishna,G. Rajaram,Y. Rajesh,Nilanjan Basu,Jayeeta Lahiri 대한금속·재료학회 2020 ELECTRONIC MATERIALS LETTERS Vol.16 No.3
Thin flm Au–SiC–Cu and Au–SiC–Pt crossbar structures of 40μmx40μm size where all three layers are 100 nm thicknesswere fabricated by lithography. Decomposition of the SiC flm is observed under the infuence of an electric feld (104–106 V/cm) applied between the Au bottom electrode and the top metal electrode (Cu or Pt) for a few cycles during the course oftesting as a resistive switching structure. This is evidenced using Raman mapping and Raman spectroscopy techniques. TheRaman spectra reveal peaks corresponding to the D and G bands of nanocrystalline graphite. Raman mapping at diferentlocations indicates that most of the graphite forms at the interface between the metal electrode and SiC. Raman mappingimages reveal the formation of graphite on the surface. This technique is simple and enables site-selective localized growthof nanocrystalline graphite which is expected to impact many nanoscale applications. It could also be extended to formgraphene at the nanoscale.
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