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Effects of Hf Incorporation on Indium Zinc Oxide Thin-Film Transistors using Solution Process
Xifeng Li,Enlong Xin,Jianhua Zhang 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.1
Thin-film transistors (TFTs) were fabricated by employing amorphoushafnium indium zinc oxide (HIZO) thin films as the active channellayer by the solution process. Thermogravimetry-differential thermalanalysis, transmittance measurements, atomic force microscopy,scanning electron microscopy, x-ray diffraction, and Fourier transforminfrared analysis were used to study the formation, structure, andoptical properties of the HIZO films. The results showed that theaddition of Hf to the IZO system resulted in suppression of carriergeneration. The HIZO TFTs exhibited lower off-currents and higher onoffcurrent ratios than IZO TFTs without Hf doping. HIZO TFTs with aHf doping content of 5 at. % obtained a threshold voltage of 3.7 V, amobility of 0.27 cm2 V−1 s−1, a subthreshold swing of 1.2 V/dec, and anon-off current ratio of 106.