A Novel Adaptive Biasing Scheme for CMOS Op-Amps

Girish Kurkure,Aloke K. Dutta 대한전자공학회 2005 Journal of semiconductor technology and science Vol.5 No.3

In this paper, we present a new adaptive biasing scheme for CMOS op-amps. The designed circuit has been used in an Operational Transconductance Amplifier (OTA) with ±1 V power supply, and it has improved the positive and negative slew rates from 2.92 V/msec to 1242 V/msec and from 1.56 V/msec to 133 V/msec respectively, while maintaining all the smallsignal performance parameter values the same as that without adaptive biasing (as expected), however, there was a marginal decrease of the dynamic range. The most useful features of the proposed circuit are that it uses a very low number of components (thus not creating severe area penalty) and requires only 25 ㎻of extra stand-by power.

A Novel Adaptive Biasing Scheme for CMOS Op-Amps

Kurkure Girish,Dutta Aloke K. The Institute of Electronics and Information Engin 2005 Journal of semiconductor technology and science Vol.5 No.3

In this paper, we present a new adaptive biasing scheme for CMOS op-amps. The designed circuit has been used in an Operational Transconductance Amplifier (OTA) with ${\pm}1$ V power supply, and it has improved the positive and negative slew rates from 2.92 V/msec to 1242 V/msec and from 1.56 V/msec to 133 V/msec respectively, while maintaining all the small-signal performance parameter values the same as that without adaptive biasing (as expected), however, there was a marginal decrease of the dynamic range. The most useful features of the proposed circuit are that it uses a very low number of components (thus not creating severe area penalty) and requires only 25 nW of extra stand-by power.

A Unified Analytical One-Dimensional Surface Potential Model for Partially Depleted (PD) and Fully Depleted (FD) SOI MOSFETs

Pandey, Rahul,Dutta, Aloke K. The Institute of Electronics and Information Engin 2011 Journal of semiconductor technology and science Vol.11 No.4

In this work, we present a unified analytical surface potential model, valid for both PD and FD SOI MOSFETs. Our model is based on a simplified one dimensional and purely analytical approach, and builds upon an existing model, proposed by Yu et al. [4], which is one of the most recent compact analytical surface potential models for SOI MOSFETs available in the literature, to improve its accuracy and remove its inconsistencies, thereby adding to its robustness. The model given by Yu et al. [4] fails entirely in modeling the variation of the front surface potential with respect to the changes in the substrate voltage, which has been corrected in our modified model. Also, [4] produces self-inconsistent results due to misinterpretation of the operating mode of an SOI device. The source of this error has been traced in our work and a criterion has been postulated so as to avoid any such error in future. Additionally, a completely new expression relating the front and back surface potentials of an FD SOI film has been proposed in our model, which unlike other models in the literature, takes into account for the first time in analytical one dimensional modeling of SOI MOSFETs, the contribution of the increasing inversion charge concentration in the silicon film, with increasing gate voltage, in the strong inversion region. With this refinement, the maximum percent error of our model in the prediction of the back surface potential of the SOI film amounts to only 3.8% as compared to an error of about 10% produced by the model of Yu et al. [4], both with respect to MEDICI simulation results.

A Unified Analytical One-Dimensional Surface Potential Model for Partially Depleted (PD) and Fully Depleted (FD) SOI MOSFETs

RAHUL PANDEY,ALOKE K. DUTTA 대한전자공학회 2011 Journal of semiconductor technology and science Vol.11 No.4

In this work, we present a unified analytical surface potential model, valid for both PD and FD SOI MOSFETs. Our model is based on a simplified one dimensional and purely analytical approach, and builds upon an existing model, proposed by Yu et al. [4], which is one of the most recent compact analytical surface potential models for SOI MOSFETs available in the literature, to improve its accuracy and remove its inconsistencies, thereby adding to its robustness. The model given by Yu et al. [4] fails entirely in modeling the variation of the front surface potential with respect to the changes in the substrate voltage, which has been corrected in our modified model. Also, [4] produces self-inconsistent results due to misinterpretation of the operating mode of an SOI device. The source of this error has been traced in our work and a criterion has been postulated so as to avoid any such error in future. Additionally, a completely new expression relating the front and back surface potentials of an FD SOI film has been proposed in our model, which unlike other models in the literature, takes into account for the first time in analytical one dimensional modeling of SOI MOSFETs, the contribution of the increasing inversion charge concentration in the silicon film, with increasing gate voltage, in the strong inversion region. With this refinement, the maximum percent error of our model in the prediction of the back surface potential of the SOI film amounts to only 3.8% as compared to an error of about 10% produced by the model of Yu et al. [4], both with respect to MEDICI simulation results.

An Analytical Model of the First Eigen Energy Level for MOSFETs Having Ultrathin Gate Oxides

B. PAVAN KUMAR YADAV,ALOKE K. DUTTA 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.3

In this paper, we present an analytical model for the first eigen energy level (E0) of the carriers in the inversion layer in present generation MOSFETs, having ultrathin gate oxides and high substrate doping concentrations. Commonly used approaches to evaluate E0 make either or both of the following two assumptions: one is that the barrier height at the oxide-semiconductor interface is infinite (with the consequence that the wave function at this interface is forced to zero), while the other is the triangular potential well approximation within the semiconductor (resulting in a constant electric field throughout the semiconductor, equal to the surface electric field). Obviously, both these assumptions are wrong, however, in order to correctly account for these two effects, one needs to solve Schrodinger and Poisson equations simultaneously, with the approach turning numerical and computationally intensive. In this work, we have derived a closed-form analytical expression for E0, with due considerations for both the assumptions mentioned above. In order to account for the finite barrier height at the oxide-semiconductor interface, we have used the asymptotic approximations of the Airy function integrals to find the wave functions at the oxide and the semiconductor. Then, by applying the boundary condition at the oxidesemiconductor interface, we developed the model for E0. With regard to the second assumption, we proposed the inclusion of a fitting parameter in the wellknown effective electric field model. The results matched very well with those obtained from Li’s model. Another unique contribution of this work is to explicitly account for the finite oxide-semiconductor barrier height, which none of the reported works considered.

An Analytical Model of the First Eigen Energy Level for MOSFETs Having Ultrathin Gate Oxides

Yadav, B. Pavan Kumar,Dutta, Aloke K. The Institute of Electronics and Information Engin 2010 Journal of semiconductor technology and science Vol.10 No.3

In this paper, we present an analytical model for the first eigen energy level ($E_0$) of the carriers in the inversion layer in present generation MOSFETs, having ultrathin gate oxides and high substrate doping concentrations. Commonly used approaches to evaluate $E_0$ make either or both of the following two assumptions: one is that the barrier height at the oxide-semiconductor interface is infinite (with the consequence that the wave function at this interface is forced to zero), while the other is the triangular potential well approximation within the semiconductor (resulting in a constant electric field throughout the semiconductor, equal to the surface electric field). Obviously, both these assumptions are wrong, however, in order to correctly account for these two effects, one needs to solve Schrodinger and Poisson equations simultaneously, with the approach turning numerical and computationally intensive. In this work, we have derived a closed-form analytical expression for $E_0$, with due considerations for both the assumptions mentioned above. In order to account for the finite barrier height at the oxide-semiconductor interface, we have used the asymptotic approximations of the Airy function integrals to find the wave functions at the oxide and the semiconductor. Then, by applying the boundary condition at the oxide-semiconductor interface, we developed the model for $E_0$. With regard to the second assumption, we proposed the inclusion of a fitting parameter in the wellknown effective electric field model. The results matched very well with those obtained from Li's model. Another unique contribution of this work is to explicitly account for the finite oxide-semiconductor barrier height, which none of the reported works considered.