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RISS 인기검색어
- 검색키워드
- 저자 : Duc V. Dinh (검색결과 2 건)
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Size-dependent Field-emission Properties from Triangular-shaped GaN Nanostructures
Duc V. Dinh,J. H. Yang,S. M. Kang,S. W. Kim,윤대호 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.1
Gallium nitride (GaN) nanostructures were synthesized on Si substrates by using the vapor-phase epitaxy (VPE) method. The as-synthesized GaN nanostructures with a hexagonal, single-crystalline structure possessed a triangular cross-section with nanorod and nanowire diameters ranging from about 100 to 280 nm and from about 20 to 60 nm, respectively. The field-emission (FE) properties of the GaN nanostructures were investigated in terms of their size dependence. Turn-on fields of about 4.85 V/ and 4.10 V/, respectively, for the GaN nanorods and nanowires were obtained, corresponding to field-enhancement factors of about 373 and 1427. The higher aspect ratio of the GaN nanowires compared to that of the GaN nanorods caused the differences in FE properties.
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Synthesis of GaN nanowires and nanorods via self-growth mode control
Kang, S.M.,Shin, T.I.,Dinh, Duc V.,Yang, J.H.,Kim, S.-W.,Yoon, D.H. Elsevier 2009 Microelectronics Journal Vol.40 No.2
<P><B>Abstract</B></P><P>The synthesis of hexagonal wurzite one-dimensional (1D) GaN nanostructures on <I>c</I>-Al<SUB>2</SUB>O<SUB>3</SUB> substrates was investigated using a thermal chemical vapor deposition (CVD) process. The diameter of the GaN nanostructures was controlled by varying the growth time using a mixture of GaN powder and Ga metal with the ammonia gas reaction. The morphologies of the GaN nanowires and nanorods were confirmed by field emission scanning electron microscopy. The micro-Raman spectroscopy and X-ray scattering measurements indicated that the GaN nanostructures had a hexagonal wurzite structure without any oxide phases. We investigated the difference in the structural properties between the GaN nanowires and nanorods. Deep-level emission bands were not observed in cathodoluminescence measurements from either the GaN nanowires or nanorods, indicating the incorporation of low-level impurities into our 1D GaN nanostructures.</P>
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