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Seung-Woo Son,Jung Ho Park,Ji-Min Baek,Do-Kwyn Kim,Seung Ryul Lee,Sang-Moon Lee,Jieon Yoon,Jungtaek Kim,Woo-Bin Song,Sunjung Kim,Dong Suk Shin,Yihwan Kim,Seung Heon Shin,Tae-Woo Kim,Jung-Hee Lee,Dae-H IEEE 2017 IEEE electron device letters Vol.38 No.6
<P>In this letter, we have investigated the properties of In0.53Ga0.47As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on a 300-mm(100) Si wafer. We have explored the impact of scaling down In0.53Ga0.47As channel thickness (t(ch)) from 15 to 5 nm. The fabricated devices show excellent electrostatic integrity, such as subthreshold-swing (SS) < 80 mV/decade and drain-induced barrier-lower (DIBL) < 20 mV/V. Furthermore, we have extracted the effective mobility (mu(n_eff)) of the fabricated devices to investigate the carrier transport properties of the InGaAs MOSFETs with different values of t(ch). The device with t(ch) = 15 nm displayed a value of mu(n_eff) = 2, 190 cm(2)/V-s at room temperature. This value was found to decrease as tch was scaled down.</P>