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The Effect of Low Energy Nitrogen Ion Implantation on Graphene Nanosheets
Mukesh Mishra,Subbiah Alwarappan,Dinaker Kanjilal,Tanuja Mohanty 대한금속·재료학회 2018 ELECTRONIC MATERIALS LETTERS Vol.14 No.4
Herein, we report the effect 50 keV nitrogen ion implantation at varying fluence on the optical properties of graphenenanosheets (number of layers < 5). Initially, graphene nanosheets synthesized by the direct liquid exfoliation of graphitelayers were deposited on a cleaned Si-substrate by drop cast method. These graphene nanosheets are implanted with 50 keVnitrogen-ion beam at six different fluences. Raman spectroscopic results show that the D, D′ and G peak get broadened upto the nitrogen ion fluence of 1 × 1015 ions/cm2, while 2D peak of graphene nanosheets disappeared for nitrogen-ions havefluence more than 1014ions/cm2. However, further increase of fluence causes the indistinguishable superimposition of D,D′ and G peaks. Surface contact potential value analysis for ion implanted graphene nanosheets shows the increase in defectconcentration from 1.15 × 1012 to 1.98 × 1014 defects/cm2 with increasing the nitrogen ion fluence, which resembles theFermi level shift towards conduction band. XRD spectra confirmed that the crystallinity of graphene nanosheets was foundto tamper with increasing fluence. These results revealed that the limit of nitrogen ion implantation resistant on the vibrationalbehaviors for graphene nanosheets was 1015ions/cm2 that opens up the scope of application of graphene nanosheetsin device fabrication for ion-active environment and space applications.
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