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Martin, Marie-Blandine,Dlubak, Bruno,Weatherup, Robert S.,Yang, Heejun,Deranlot, Cyrile,Bouzehouane, Karim,Petroff, Fré,dé,ric,Anane, Abdelmadjid,Hofmann, Stephan,Robertson, John,Fert, Alb American Chemical Society 2014 ACS NANO Vol.8 No.8
<P/><P>We report on the successful integration of low-cost, conformal, and versatile atomic layer deposited (ALD) dielectric in Ni–Al<SUB>2</SUB>O<SUB>3</SUB>–Co magnetic tunnel junctions (MTJs) where the Ni is coated with a spin-filtering graphene membrane. The ALD tunnel barriers, as thin as 0.6 nm, are grown layer-by-layer in a simple, low-vacuum, ozone-based process, which yields high-quality electron-transport barriers as revealed by tunneling characterization. Even under these relaxed conditions, including air exposure of the interfaces, a significant tunnel magnetoresistance is measured highlighting the robustness of the process. The spin-filtering effect of graphene is enhanced, leading to an almost fully inversed spin polarization for the Ni electrode of −42%. This unlocks the potential of ALD for spintronics with conformal, layer-by-layer control of tunnel barriers in magnetic tunnel junctions toward low-cost fabrication and down-scaling of tunnel resistances.</P>