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Single atomic spin sensing of magnetic interactions in a tunnel junction
Jinkyung Kim,Won-jun Jang,Thi Hong Bui,Deung-Jang Choi,Christoph Wolf,Fernando Delgado,Yi Chen,Denis Krylov,Soonhyeong Lee,Sangwon Yoon,Christopher P. Lutz,Andreas J. Heinrich,Yujeong Bae 한국자기학회 2021 한국자기학회 학술연구발표회 논문개요집 Vol.31 No.1
Single spins are widely regarded as a leading candidate for realizing next-generation quantum devices for sensing and quantum information processing. Detection and coherent control of single spins require to localize single spins and characterize its magnetic surroundings. Scanning tunneling microscopy in combination with electron spin resonance (ESR-STM) technique [1] enables a direct access to the quantum states of single magnetic atoms or molecules on surfaces. Using ESR-STM, we investigated spin resonance of hydrogenated Ti (TiH) atoms adsorbed on bridge binding site of MgO in a two-dimensional vector magnetic field. Here, the spin 1/2 TiH atom with no magnetic anisotropy was employed as a probe of magnetic environments at the tunnel junction. We found both ESR frequency and amplitude change as a function of the angle of vector magnetic fields. The resonance frequency varied by different vector magnetic fields indicates an anisotropy of the g-factor, resulting from the variation of angular momentum contributions due to the crystal fields. We developed a stereoscopic way to unravel the g-factor along the three principal axes. Moreover, ESR amplitude dependence on the direction of magnetic fields provides the further understanding of ESR mechanisms, which results from two factors, tunneling magnetoresistance (TMR) effect at the spin-polarized STM junction and the transverse magnetic field to drive ESR. Our results will enable to predict ESR active spin centers on different substrates as well as in other quantum-nanoscience platforms.