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RISS 인기검색어
- 검색키워드
- 저자 : Dasaradha Rao, L. (검색결과 4 건)
- 무료
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Dasaradha Rao, L.,Shanthi Latha, K.,Rajagopal Reddy, V.,Choi, C.J. Pergamon Press [etc.] 2015 Vacuum Vol.119 No.-
The effects of rapid thermal annealing on the electrical and structural properties of a fabricated Au/Y/p-InP Schottky barrier diode (SBD) have been investigated. The estimated Schottky barrier heights (SBHs) of the as-deposited and 200 <SUP>o</SUP>C annealed Au/Y/p-InP SBDs are found to be 0.62 eV (I-V)/0.83 eV (C-V) and 0.63 eV (I-V)/0.92 eV (C-V) respectively. However, the SBH increases to 0.65 eV (I-V)/0.96 eV (C-V) upon annealing at 300 <SUP>o</SUP>C. Further, the SBH slightly decreases to 0.59 eV (I-V)/0.78 eV (C-V) for contact annealed at 400 <SUP>o</SUP>C. The SBH, ideality factor and series resistance of the Au/Y/p-InP SBD are estimated by Norde and Cheung's methods. Also, the discrepancy between SBHs estimated from I-V, C-V, Norde and Cheung's methods are described and discussed. It is noted that the interface state density of the Au/Y/p-InP SBD decreases upon annealing at 300 <SUP>o</SUP>C and then slightly increases after annealing at 400 <SUP>o</SUP>C. The AES and XRD measurements have revealed that the formation of Au-In, Au-P and Y-P interfacial phases at the interface may be the reason for the increase and decrease of SBHs upon annealing. The AFM results showed that the surface morphology of the Au/Y Schottky contact is fairly smooth at various annealing temperatures.
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Analysis of electrical characteristics of Er/p-InP Schottky diode at high temperature range
A. Ashok Kumar,L. Dasaradha Rao,V. Rajagopal Reddy,최철종 한국물리학회 2013 Current Applied Physics Vol.13 No.6
We report on the temperature-dependent electrical characteristics of Er/p-InP Schottky barrier diodes. The currentevoltage (IeV) and capacitanceevoltage (CeV) measurements have been carried out in the temperature range of 300e400 K. Using thermionic emission (TE) theory, the zero-bias barrier height (Fbo) and ideality factor (n) are estimated from IeV characteristics. It is observed that there is a decrease in n and an increase in the Fbo with an increase in temperature. The barrier height inhomogenity at the metal/semiconductor (MS) interface resulted in Gaussian distribution of Fbo and n. The laterally homogeneous Schottky barrier height value of approximately 1.008 eV for the Er/p-InP Schottky barrier diodes is extracted from the linear relationship between the experimental zero-bias barrier heights and ideality factors. The series resistance (Rs) is calculated by Chenug’s method and it is found that it increases with the decrease in temperature. The reverse-bias leakage current mechanism of Er/p-InP Schottky diode is investigated. Both PooleeFrenkel and Schottky emissions are described and discussed. Furthermore, capacitanceevoltage (C eV) measurements of the Er/p-InP Schottky contacts are also carried out at room temperature in dark at different frequencies of 10, 100 and 1000 kHz. Using Terman’s method, the interface state density is calculated for Er/p-InP Schottky diode at different temperatures.
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Analysis of electrical characteristics of Er/p-InP Schottky diode at high temperature range
Ashok Kumar, A.,Dasaradha Rao, L.,Rajagopal Reddy, V.,Choi, C.J. Elsevier 2013 Current Applied Physics Vol.13 No.6
We report on the temperature-dependent electrical characteristics of Er/p-InP Schottky barrier diodes. The current-voltage (I-V) and capacitance-voltage (C-V) measurements have been carried out in the temperature range of 300-400 K. Using thermionic emission (TE) theory, the zero-bias barrier height (Φ<SUB>bo</SUB>) and ideality factor (n) are estimated from I-V characteristics. It is observed that there is a decrease in n and an increase in the Φ<SUB>bo</SUB> with an increase in temperature. The barrier height inhomogenity at the metal/semiconductor (MS) interface resulted in Gaussian distribution of Φ<SUB>bo</SUB> and n. The laterally homogeneous Schottky barrier height value of approximately 1.008 eV for the Er/p-InP Schottky barrier diodes is extracted from the linear relationship between the experimental zero-bias barrier heights and ideality factors. The series resistance (R<SUB>s</SUB>) is calculated by Chenug's method and it is found that it increases with the decrease in temperature. The reverse-bias leakage current mechanism of Er/p-InP Schottky diode is investigated. Both Poole-Frenkel and Schottky emissions are described and discussed. Furthermore, capacitance-voltage (C-V) measurements of the Er/p-InP Schottky contacts are also carried out at room temperature in dark at different frequencies of 10, 100 and 1000 kHz. Using Terman's method, the interface state density is calculated for Er/p-InP Schottky diode at different temperatures.
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V. Rajagopal Reddy,A. Umapathi,L. Dasaradha Rao 한국물리학회 2013 Current Applied Physics Vol.13 No.8
A thin poly(ethylmethacrylate) (PEMA) layer is deposited on n-InP as an interlayer for electronic modification of Au/n-InP Schottky structure. The electrical properties of Au/PEMA/n-InP Schottky diode have been investigated by currentevoltage (IeV) and capacitanceevoltage (CeV) measurements at different annealing temperatures. Experimental results show that Au/PEMA/n-InP structure exhibit a good rectifying behavior. An effective barrier height as high as 0.83 eV (IeV) and 1.09 eV (CeV) is achieved for the Au/PEMA/n-InP Schottky structure after annealing at 150 ℃ compared to the as-deposited and annealed at 100 and 200 ℃. Modified Norde’s functions and Cheung method are also employed to calculate the barrier height, series resistance and ideality factors. Results show that the barrier height increases upon annealing at 150 ℃ and then slightly decreases after annealing at 200 ℃. The PEMA layer increases the effective barrier height of the structure as this layer creates a physical barrier between the Au metal and the n-InP. Terman’s method is used to determine the interface state density and it is found to be 5.141 x 1012 and 4.660 x 1012 cm-2 eV-1 for the as-deposited and 200 ℃ annealed Au/PEMA/n-InP Schottky diodes. Finally,it is observed that the Schottky diode parameters change with increasing annealing temperature.
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