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Seo, Hyunwoong,Ichida, Daiki,Hashimoto, Shinji,Itagaki, Naho,Koga, Kazunori,Shiratani, Masaharu,Nam, Sang-Hun,Boo, Jin-Hyo American Scientific Publishers 2016 Journal of nanoscience and nanotechnology Vol.16 No.5
<P>The multiple exciton generation characteristics of quantum dots have been expected to enhance the performance of photochemical solar cells. In previous work, we first introduced Si quantum dot for sensitized solar cells. The Si quantum dots were fabricated by multi-hollow discharge plasma chemical vapor deposition, and were characterized optically and morphologically. The Si quantum dot-sensitized solar cells had poor performance due to significant electron loss by charge recombination. Although the large Si particle size resulted in the exposure of a large TiO2 surface area, there was a limit to ho much the particle size could be decreased due to the reduced absorbance of small particles. Therefore, this work focused on decreasing the internal impedance to improve charge transfer. TiO2 was electronically modified by doping with vanadium, which can improve electron transfer in the TiO2 network, and which is stable in the redox electrolyte. Photogenerated electrons can more easily arrive at the conductive electrode due to the decreased internal impedance. The dark photovoltaic properties confirmed the reduction of charge recombination, and the photon-to-current conversion efficiency reflected the improved electron transfer. Impedance analysis confirmed a decrease in internal impedance and an increased electron lifetime. Consequently, these improvements by vanadium doping enhanced the overall performance of Si quantum dot-sensitized solar cells.</P>
Analysis on the Photovoltaic Property of Si Quantum Dot-Sensitized Solar Cells
Hyunwoong Seo,Daiki Ichida,Giichiro Uchida,Kunihiro Kamataki,Naho Itagaki,Kazunori Koga,Masaharu Shiratani 한국정밀공학회 2014 International Journal of Precision Engineering and Vol. No.
This work first introduced Si quantum dots (QDs) for QD-sensitized solar cells (QDSCs). However, the particle size of Si QDs, which had visible light absorption, was relatively large. The paint-type Si QDSC was proposed in this work because Si QDs could not penetrate into nano-porous TiO2 network. Si QDs were synthesized by multi-hollow plasma discharge CVD and mixed with TiO2 paste. For better performance, thickness of Si-TiO2 layer was varied by coating times and Si-TiO2 films were optically and electrically analyzed. As a result, 6 times screen printed Si-TiO2 film had the best performance with the smallest internal impedance and the highest photon to current efficiency.