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RISS 인기검색어
- 검색키워드
- 저자 : DIBI Zohir (검색결과 6 건)
- 무료
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Modeling and Simulation with Spice of the New Power SiC JFET
Messaadi Lotfi,Dibi Zohir 보안공학연구지원센터 2014 International Journal of u- and e- Service, Scienc Vol.7 No.5
This paper present the development of a SPICE SiC JFET model and its corresponding characterization process. The device under study is a 1.3 kV, 15 A SiC JFET prototype manufactured by SiCED, packaged in a TO-220 case. The static and dynamic behavior of the SiC power JFET is simulated and compared to the measured data to show the accuracy of the Spice model. The switching characteristics have been tested on a double pulse tester under multiple conditions. A similar double pulse test circuit with parasitics in consideration has been simulated in Spice with the MOSFET model, which gave good results.
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PSpice Implementation of a New Esaki Tunnel Diode Macro-Model
Messaadi Lotfi,Dibi Zohir 보안공학연구지원센터 2016 International Journal of Smart Home Vol.10 No.4
Tunnel diode is a very important device in industry but it is very difficult to simulate it using any circuit-simulation program. This paper proposes an Analog Behavioral Model (ABM) in Pspice of a tunnel diode. The Pspice parameters are extracted and implemented by deriving the device parameters from the device structure. Most of the device parameters are calculated from estimated values. A tunnel diode based oscillator is also proposed and simulated using circuit analysis software. The model is validated by means of comparison with experimental measurements and with the results obtained from other reference model. Excellent agreement is demonstrated between measured and simulation responses. The proposed implementation can be used in a PSpice program, designed as a subcircuit which can be called when required by the main program.
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Modeling and Simulation of Power MOSFET Using Orcad-Pspice
Messaadi Lotfi,Dibi Zohir 보안공학연구지원센터 2016 International Journal of u- and e- Service, Scienc Vol.9 No.9
This paper provides a macromodel in Pspice (Personal Simulation Program with Integrated Circuit Emphasis) for a trench power MOSFET rated at 70V over a temperature range of -55°C to 175°C. The Pspice macromodel was built using device parameters extracted through experiment. The static behavior of the trench power MOSFET is simulated and compared to the measured data to show the accuracy of the Pspice model. The temperature dependent behavior was simulated and analyzed.
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ANN Modeling of a Smart MEMS-based Capacitive Humidity Sensor
Kouda Souhil,Dibi Zohir,Barra Samir,Dendouga Abdelghani,Meddour Fayçal 제어·로봇·시스템학회 2011 International Journal of Control, Automation, and Vol.9 No.1
This paper presents a design of a smart humidity sensor. First we begin by the modeling of a Capacitive MEMS-based humidity sensor. Using neuronal networks and Matlab environment to accu-rately express the non-linearity, the hysteresis effect and the cross sensitivity of the output humidity sensor used. We have done the training to create an analytical model CHS ‘Capacitive Humidity Sen-sor’. Because our sensor is a capacitive type, the obtained model on PSPICE reflects the humidity variation by a capacity variation, which is a passive magnitude; it requires a conversion to an active magnitude, why we realize a conversion capacity/voltage using a switched capacitor circuit SCC. In a second step a linearization, by Matlab program, is applied to CHS response whose goal is to create a database for an element of correction ‘CORRECTOR’. After that we use the bias matrix and the weights matrix obtained by training to establish the CHS model and the CORRECTOR model on PSPICE simulator, where the output of the first is identical to the output of the CHS and the last cor-rect its nonlinear response, and eliminate its hysteresis effect and cross sensitivity. The three blocks; CHS model, CORRECTOR model and the capacity/voltage converter, represent the smart sensor.
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Modeling of the New Transient Behavioral Spice Model of IGBTs Including Temperature Effect
Messaadi Lotfi,Dibi Zohir 보안공학연구지원센터 2016 International Journal of Hybrid Information Techno Vol.9 No.1
This paper presents an Analog behavioral model (ABM) of the Insulated Gate Bipolar Transistor (IGBT) with Orcad Pspice 16.5. The Spice model was built using device parameters extracted through experiment. A full study of switching behavior of IGBT during turn-off and turn-on for inductive load with freewheeling diode is presented and simulated. All simulation results presented in this paper are validated, compared and showed good agreement with the measured data. The temperature dependent behavior is simulated and analyzed.
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Hakim BAHA,DIBI Zohir 대한전기학회 2010 Journal of Electrical Engineering & Technology Vol.5 No.3
At present, Metal Oxide gas Sensors (MOXs) are widely used in gas detection because of its advantages, including high sensitivity and low cost. However, MOX presents well-known problems, including lack of selectivity and environment effect, which has motivated studies on different measurement strategies and signal-processing algorithms. In this paper, we present an artificial neural network (ANN) that models an MOX sensor (TGS822) used in a dynamic environment. This model takes into account dependence in relative humidity and in gas nature. Using MATLAB interface in the design phase and optimization, the proposed model is implemented as a component in an electronic simulator library and accurately expressed the nonlinear character of the response and that its dependence on temperature and relative humidity were higher than gas nature.
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