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Role of propagating ionisation fronts in semiconductor generation of sub-ps THz radiation
S.P. Jamison,B. Ersfeld,D.A. Jaroszynski 한국물리학회 2004 Current Applied Physics Vol.4 No.2-4
Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. Amodel based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.