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RISS 인기검색어
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- 저자 : Chuan Lung Chuang (검색결과 3 건)
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Chung Ping Liu,Ming Wei Chang,Chuan Lung Chuang 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.63 No.11
It was known that properties of copper-indium-gallium-diselenide (CIGS) thin films were evidentlyaffected by precursor nanoparticle-ink and sintering technology. The nanoparticles were fabricatedby using a rotary ball-milling (RBM) technique. After RBM, the particle size of the agglomeratedCIGS powder was smaller than 100 nm. The nanoparticle ink was printed onto a Mo/soda limeglass substrate and baked at a low temperature to remove solvents and to form a dry precursor. Crystallographic, morphological, and stoichiometric properties of films were then obtained by usingthe precursor CIGS samples sintered at various heating rates in a non-vacuum environment withoutselenization. Analytical results revealed that the 2-theta data of the sample sintered at a heatingrate of 15 C/s were the closest to the data on the JCPDS card for Cu(Ga0.3In0.7)Se2.0 because theirangles were 26.8, 44.5, and 52.7, respectively. In addition, analytical results indicated that theCIGS absorption layer prepared at a heating rate of 15 C/s had a chalcopyrite structure and favorablecompositions. For this sample, the mole ratio of Cu:In:Ga:Se was equal to 0.98:0.81:0.28:1.93,and related ratios of Ga/(In+Ga) and Cu/(In+Ga) were 0.26 and 0.90, respectively.
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Chung Ping Liu,Ming Wei Chang,Chuan Lung Chuang 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.9
This paper focuses on surfactant additives (SA) that are used in alkaline etching of p-typemonocrystalline silicon wafers for use in screen-printed silicon solar cells. An Al/p-type Si/ntypeSiP/SiNx/Ag solar cell with an active area of 15.6 cm2 was fabricated. The highest measuredefficiency of the solar cells was 19.24%, which proves that the SA method is highly efficient for fabricatingmonocrystalline silicon solar cells. The results show that 0.4 L of SA is the most favorablevolume for alkaline etching of solar-cell samples. Samples etched at this volume exhibit the lowestaverage reflectance of 0.596%, an average internal quantum efficiency (IQE) gain of 5.6% and anefficiency gain of 0.84%, thus showing the SA method to be an efficient anisotropic etching process. In addition, the cell with the highest efficiency had an increase of 4.57% in power, an increase of3.1% in the short-circuit current, and an increase of 1.43% in the open-circuit voltage. In summary,microstructural, reflectance, IQE, and I − V measurements revealed that the best cell was formedusing an optimal SA volume of 0.4 L.
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Chung Ping Liu,Ming Wei Chang,Chuan Lung Chuang 한국물리학회 2014 Current Applied Physics Vol.14 No.5
This paper concerns the topic of surface passivation properties of rapid thermal oxidation on p-type monocrystalline silicon wafer for use in screen-printed silicon solar cells. It shows that inline thermal oxidation is a very promising alternative to the use of conventional batch type quartz tube furnaces for the surface passivation of industrial phosphorus-diffused emitters. Five minutes was the most favorable holding time for the rapid thermal oxidation growth of the solar cell sample, in which the average carrier lifetime was increased 19.4 ms. The Fourier transform infrared spectrum of the rapid thermal oxidation sample, whose structure was Al/Al-BSF/p-type Si/n-type SiP/SiO2/SiNx/Ag solar cell with an active area of 15.6 cm2, contained an absorption peak at 1085 cm1, which was associated with the SieO bonds in silicon oxide. The lowest average reflectance of this sample is 0.87%. Furthermore, for this sample, its average of internal quantum efficiency and conversion efficiency are respectively increased by 8% and 0.23%, compared with the sample without rapid thermal oxidation processing.
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