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Thin-film electronics based on all-2D van der Waals heterostructures
Liu Xinling,Yang Xiaomin,Sang Weihui,Huang Hai,Li Wenwu,Lin Yen-Fu,Chu Junhao 한국정보디스플레이학회 2021 Journal of information display Vol.22 No.4
Two-dimensional (2D) layered materials including metal, semiconductor, and insulator have received extensive attention in recent years. The weak van-der-Waals (vdW) interactions between 2D materials layers enable them to isolate monolayers and restack into artificial 2D vdW heterostructures in the desired sequence. These assembled all-2D vdW heterostructures are promising platforms for fabricating next-generation electronics as well as optoelectronics. In particular, the all-2D vdW heterostructure devices composed entirely of 2D layered material have received extensive attention due to their natural thickness, atomically sharp heterointerfaces, and excellent mechanical flexibility. Herein, we firstly introduce 2D vdW heterostructures and their preparation methods. Secondly, the recent progress of field-effect transistors (FETs) and photodetectors based on all-2D vdW heterostructures are summarized. Finally, we discuss some challenges of all-2D vdW heterostructure-based devices for practical applications and offer personal perspectives toward the future development of thin-film electronics.
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Reliable Mobility Evaluation of Organic Field-Effect Transistors With Different Contact Metals
Huang, Fanming,Liu, Ao,Zhu, Huihui,Xu, Yong,Balestra, Francis,Ghibaudo, Gerard,Noh, Yong-Young,Chu, Junhao,Li, Wenwu IEEE 2019 IEEE electron device letters Vol.40 No.4
<P>The reliability of mobility evaluation of organic field-effect transistors (OFETs) is a serious issue because numerous overestimated and underestimated mobilities have been reported recently. A reliable approach to accurately evaluate the OFET mobility is therefore highly desirable. Here, in this letter, two commonly employed methods and the Y function method (YFM) were used to extract the mobilities of indacenodithiophene-co-benzothiadiazole (IDT-BT) OFETs with four different contact metals. The mobilities extracted by the commonly used methods varied greatly with the contact metal and channel length, whereas those extracted by the YFM were very stable and approached the intrinsic mobility of IDT-BT. Our results show that YFM is a precise approach that can be widely used to evaluate the OFET mobility.</P>
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