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Current induced magnetization switching in GaMnAsP film with Perpendicular Magnetic Anisotropy
Seongjin Park,Kyung Jae Lee,Phunvira Chongthanaphisut,Sanghoon Lee,X. Liu,M. Dobrowolska,J. K. Furdyna 한국자기학회 2021 한국자기학회 학술연구발표회 논문개요집 Vol.31 No.1
We have investigated spin-orbit torque (SOT) magnetization switching behavior of (Ga,Mn)(As,P) layer with perpendicular anisotropy. In order to study crystalline dependence of SOT magnetization switching, we have fabricated Hall devices along the [110] and the [110] directions, in which the Rashba-type and Dresselhaus-type spin-orbit fields are parallel and antiparallel to each other. We have adapted Hall effect measurements to monitor magnetization reversal process of the film. The Hall resistance (HR) measured with in-plane and out-of-plane magnetic field revealed that the (Ga,Mn)(As,P) film has out-of-plane magnetic easy axis. The SOT switching experiments was performed by scanning amplitude of current under in-plane bias field. In this experiment, we have observed opposite switching chirality for the [110] and the [110] directions, indicating opposite spin-orbit induced field for these two current directions. The results indicate that the Dresselhaus-type spin-orbit field is stronger than the Rashba-type field in a crystalline (Ga,Mn)(As,P) film.
Multi-level States of GaMnAsP Single Layer Induced by Spin-orbit Torque
Kyung Jae Lee,Seongjin Park,Phunvira Chongthanaphisut,Sanghoon Lee,X. Liu,M. Dobrowolska,J. K. Furdyna 한국자기학회 2021 한국자기학회 학술연구발표회 논문개요집 Vol.31 No.1
We have investigated spin-orbit torque (SOT) induced switching of a 25 nm GaMnAsP single layer with perpendicular magnetic anisotropy (PMA) grown by molecular beam epitaxy (MBE). We have fabricated Hall device along [100] crystal direction, in which Rashba-type and Dresselhaus-type spin-orbit induced (SOI) fields are perpendicular to each other. The SOT induced magnetization switching was carried out with a current density of ~1.9×10<sup>6</sup> A/cm<sup>2</sup> under in-plane bias field of 500 Oe at 55 K. We have achieved a reproducible and tunable multi-level states of minor-loop by performing current scan ranging from 8.0×10<sup>5</sup> A/cm<sup>2</sup> to 1.9×10<sup>6</sup> A/cm<sup>2</sup> while monitoring Hall resistance. This multi-level states can also be produced by applying pulsed current with duration of 160 ms. The results suggest that the system can be used as a memristors for neuromorphic computing.