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Chien-Yie Tsay,Wen-Che Lee 한국물리학회 2013 Current Applied Physics Vol.13 No.1
Undoped, Ga-, In-, Zr-, and Sn-doped ZnO transparent semiconductor thin films were deposited on alkalifree glasses by solegel method. 2-methoxyethanol (2-ME) and diethanolamine (DEA) were chosen as a solvent and a stabilizer, respectively. The doping concentrationwas maintained at 2 at.% in the impurity doping precursor solutions. The effects of different dopants on the structural, optical, and electrical properties of ZnO thin films were investigated. XRD results show that all annealed ZnO-based thin films had a hexagonal (wurtzite) structure. ZnO thin films doped with impurity elements obviously improved the surface flatness and enhanced the optical transmittance. All impurity doped ZnO thin films showed high transparency in the visible range (>91%). The Ga- and In- doped ZnO thin films exhibited higher Hall mobility and lower resistivity than did the undoped ZnO thin film.
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Low Temperature Deposition of ZnO Semiconductor Thin Films on a PEN Substrate by a Solution Process
Chien-Yie Tsay,Pei-Wen Wu 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.4
Low-temperature processed ZnO semiconductor films were deposited onto polyethylene naphthalate (PEN)plastic substrates by a spin coating technique using ZnO nanoparticle (NP) dispersion. The ZnO nanoparticles (NPs) were synthesized by the hydrothermal method, and solution processable dispersion was used to disperse the ZnO NPs in a mixed aqueous solution with a polyvinylpyrrolidone (PVP) dispersant agent. The effects of annealing temperature (from 150°C to 250°C) on the electrical properties of glass/ZnO film samples are reported. The optimized annealing condition (200°C) was applied for ZnO film deposited on a PEN substrate. Comparative electrical properties of the PEN/ZnO film samples before and after bending tests are also presented. Experimental results show that the electrical resistivity of the PEN/ZnO film sample was 1.91 × 104 Ω cm with a Hall mobility of 45.9 cm2/Vs. After bending tests, the electrical resistivity was raised to 1.26 × 105Ω cm and the Hall mobility was reduced to 31.0 cm2/Vs.
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