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Young, Chadwin D.,Heh, Dawei,Choi, Ri-No,Lee, Byoung-Hun,Bersuker, Gennadi The Institute of Electronics and Information Engin 2010 Journal of semiconductor technology and science Vol.10 No.2
Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.
Chadwin D. Young,Dawei Heh,Rino Choi,Byoung Hun Lee,Gennadi Bersuker 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.2
Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-κ dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trapinduced threshold voltage shift (△Vt), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-κ gate dielectric devices.
Chadwin D. Young,Dawei Heh,최리노,Byoung Hun Lee,Gennadi Bersuker 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.2
Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-κ dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trapinduced threshold voltage shift (ΔVt), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-κ gate dielectric devices.