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Cha Kyuman,Kim Yong,Bark Hong Jun,Chung Tae Hun,Kang Jung Hyun,Kim Young Dae,Yi Jae-Yel 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.II
Silicon nitride/silicon-rich-oxide (SiN/SRO) superlattices were fabricated by using dual ion-beam sputtering deposition. The effect of the SiN/SRO interface on the optical properties of the Si nanocrystals precipitated in the SRO layers was investigated by means of time-resolved photoluminescence measurements. The decay times of the photoluminescence for all superlattices were in the range of 20 ns 160 ns. Such small decay times reflect the strong effect of the non-radiative recombination centers existing at the SiN/SRO interfaces. For superlattices with thinner SRO thicknesses, the decay times were smaller for all detection wavelengths due to the increasing effect of the non-radiative recombination centers.ou